VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
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Vishay Semiconductors
Revision: 07-Oct-11
7
Document Number: 93164
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Fig. 19 - Reverse Recovery Charge Characteristics Fig. 20 - Reverse Recovery Current Characteristics
Fig. 21 - Maximum Forward Energy Power Loss Characteristics
Fig. 22 - Frequency Characteristics
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200
100A
500A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
VSK.L240..S30 Se rie s
T = 150 °C
I = 1000A
J
FM
0
50
100
150
200
250
300
0 50 100 150 200
100A
500A
Ma ximum Re verse Re c ove ry Curre nt - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
VSK.L240..S30 Serie s
T = 150 °C
I = 1000A
J
FM
1E0
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E
4
20 joule s per pulse
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
Pe a k For w a rd C urr e n t ( A )
Pu lse Ba se w id t h ( µs)
tp
1E4
VSK.L240..S10/ S20
Si n u so i d a l Pu l se
T = 15 0 ° C
J
E1 1 E2 1 E3 1 E4
20 joules per pulse
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
Pu lse Ba se w id t h ( µ s)
tp
1E1
VSK.L240..S10/ S20
Trapezoidal Pulse
T = 150 °C
J
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
50 Hz400
1000
200
1500
250010000
20000
5000
Pea k Forwa rd Current (A)
Pulse Basewidth (µs)
tp
1E4
VSK.L240..S10/ S20
Sinusoid a l Pulse
T = 9 0 ° C
C
1E11E21E31E4
50 Hz
400
1000
200150025001000020000 5000
Pulse Ba se w id t h ( µ s)
tp
1E1
VSK.L240..S10/ S20
Si n u so i d a l Pu l se
T = 100 °C
C
