SIB411DK-T1-GE3 Datasheet SIB411DK-T1-E3, SIB411DK-T1-GE3 | P1-P3

Vishay Siliconix

SiB411DK

Document Number: 74335

S-80515-Rev. C, 10-Mar-08

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

FEATURES

• Halogen-free

• TrenchFET

®

Power MOSFET

• New Thermally Enhanced PowerPAK

®

SC-75 Package

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

• Load Switch, PA Switch and Battery Switch for Portable

Devices

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

- 20

0.066 at V

GS

= - 4.5 V

- 9

a

6 nC

0.094 at V

GS

= - 2.5 V

- 9

a

0.130 at V

GS

= - 1.8 V

- 9

a

PowerPAK SC-75-6L-Single

6

5

4

1

2

3

D

G

S

1.60 mm

Marking Code

X X X

B B X

Lot Traceability

and Date code

Part # code

S

G

D

P-Channel MOSFET

Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 20

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 9

a

A

T

C

= 70 °C

- 8.9

a

T

A

= 25 °C

- 4.8

b, c

T

A

= 70 °C

- 3.8

b, c

Pulsed Drain Current

I

DM

- 15

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 9

a

T

A

= 25 °C

- 2

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

13

W

T

C

= 70 °C

8.4

T

A

= 25 °C

2.4

b, c

T

A

= 70 °C

1.6

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 5 s

R

thJA

41 51

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

7.5 9.5

RoHS

COMPLIANT

www.vishay.com

2

Document Number: 74335

S-80515-Rev. C, 10-Mar-08

Vishay Siliconix

SiB411DK

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 20 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= - 250 µA

- 18

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

2.2

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.4 - 1 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ 5 V, V

GS

= - 4.5 V

15 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3.3 A

0.055 0.066

Ω

V

GS

= - 2.5 V, I

D

= - 2.8 A

0.077 0.094

V

GS

= - 1.8 V, I

D

= - 0.77 A

0.107 0.130

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 3.3 A

9.5 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

470

pFOutput Capacitance

C

oss

95

Reverse Transfer Capacitance

C

rss

65

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 8 V, I

D

= - 4.5 A

10 15

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 4.5 A

69

Gate-Source Charge

Q

gs

0.9

Gate-Drain Charge

Q

gd

1.4

Gate Resistance

R

g

f = 1 MHz 7.5 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 2.1 Ω

I

D

≅ - 4.8 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

10 15

ns

Rise Time

t

r

40 60

Turn-Off Delay Time

t

d(off)

45 70

Fall Time

t

f

75 115

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 2.1 Ω

I

D

≅ - 4.8 A, V

GEN

= - 8 V, R

g

= 1 Ω

510

Rise Time

t

r

10 15

Turn-Off Delay Time

t

d(off)

25 40

Fall Time

t

f

10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 9

A

Pulse Diode Forward Current

I

SM

15

Body Diode Voltage

V

SD

I

S

= - 3.8 A, V

GS

= 0 V

- 0.85 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 3.8 A, di/dt = 100 A/µs, T

J

= 25 °C

20 40 ns

Body Diode Reverse Recovery Charge

Q

rr

10 20 nC

Reverse Recovery Fall Time

t

a

15

ns

Reverse Recovery Rise Time

t

b

5

Document Number: 74335

S-80515-Rev. C, 10-Mar-08

www.vishay.com

3

Vishay Siliconix

SiB411DK

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

15

0.0 0.5 1.0 1.5 2.0

V

GS

= 5 thru 3 V

V

DS

- Drain-to-Source Voltage (V)

) A ( t n e r r u C n i a r D -

I

D

2.5 V

2 V

1.5 V

0.00

0.05

0.10

0.15

0

.

20

03691215

V

GS

= 2.5 V

I

D

- Drain Current (A)

V

GS

= 1.8 V

R

)no(SD

e (Ω)cnatsiseR-nO

-

V

GS

= 4.5 V

0

2

4

6

8

02468 10 12

I

D

= 4.8 A

) V

(

e

g a

t l

o V

e c

r u

o S

- o

t - e

t a

G

-

Q

g

- Total Gate Charge (nC)

V

SG

V

DS

= 10 V

V

GS

= 16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0.0 0.3 0.6 0.9 1.2 1.5

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

)A( tnerruC niarD -I

D

25 °C

C

rss

0

100

200

300

400

500

600

700

800

048 12 16 20

C

iss

V

DS

- Drain-to-Source Voltage (V)

)Fp( ec

na

t

i

c

apaC

-

C

oss

0.6

0.8

1.0

1.2

1.4

1

.

6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V, 2.5 V, 1.8 V

T

J

- Junction Temperature (°C)

R

) n o ( S D

e c n

a t

s i

s e R - n

O -

)dezilam

r

oN(

I

D

= 3.3 A

SIB411DK-T1-GE3

SIB411DK-T1-GE3

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