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SIB411DK-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
Vishay Siliconix
SiB411DK
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
)A( tnerru C ecruoS -
I
S
0 0.2 0.6 0.8 1 1.20.4
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.3
0.4
0.5
0.6
0.7
0.
8
0.9
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
)
h
t (
S
G
)
V (
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
012345
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO ecruoS-ot-niarD -
T
J
=
25 °C
T
J
=
125 °C
0.20
0.17
0.14
0.11
0.08
0.05
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.1 1 1 0 100
10
100
1
0.01
- Drain Current (A) I
D
0.1
Limited by
R
DS(on)*
BVDSS limited
T
A
= 25 °C
Single Pulse
100 µs
1 ms
10 s
1 s
100 ms
10 ms
DC
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
www.vishay.com
5
Vishay Siliconix
SiB411DK
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150
I
D
) A ( t n e r r u C n i a r D -
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0
3
6
9
12
15
25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)
ew
o
P
www.vishay.com
6
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
Vishay Siliconix
SiB411DK
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74335.
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
1 10 100010
-1
10
-4
100
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
Single Pulse
0.1
0.2
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.1
Square Wave Pulse Duration (s)
Normalized E
f
f
ective T ransient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse
0.02
0.05
0.1
0.2
P1-P3P4-P6P7-P7

SIB411DK-T1-GE3

Mfr. #:
Buy SIB411DK-T1-GE3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 20V 9.0A 13W
Lifecycle:
New from this manufacturer.
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