LTC3851
22
3851fb
C
LOAD
to C
OUT
is greater than 1:50, the switch rise time
should be controlled so that the load rise time is limited
to approximately 25 • C
LOAD
. Thus a 10F capacitor would
require a 250s rise time, limiting the charging current
to about 200mA.
PC Board Layout Checklist
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the LTC3851. These items are also illustrated graphically
in the layout diagram of Figure 9. Check the following in
your layout:
1. Are the board signal and power grounds segregated?
The LTC3851 GND pin should tie to the ground plane
close to the input capacitor(s). The low current or signal
ground lines should make a single point tie directly to
the GND pin. The synchronous MOSFET source pins
should connect to the input capacitor(s) ground.
2. Does the V
FB
pin connect directly to the feedback resis-
tors? The resistive divider R1, R2 must be connected
between the (+) plate of C
OUT
and signal ground. The
47pF to 100pF capacitor should be as close as possible
to the LTC3851. Be careful locating the feedback resis-
tors too far away from the LTC3851. The V
FB
line should
not be routed close to any other nodes with high slew
rates.
3. Are the SENSE
and SENSE
+
leads routed together
with minimum PC trace spacing? The fi lter capaci-
tor between SENSE
+
and SENSE
should be as close
as possible to the LTC3851. Ensure accurate current
sensing with Kelvin connections as shown in Figure
10. Series resistance can be added to the SENSE lines
to increase noise rejection and to compensate for the
ESL of R
SENSE
.
APPLICATIONS INFORMATION
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
MODE/PLLIN
FREQ/PLLFLTR
RUN
TK/SS
I
TH
V
FB
SENSE
SENSE
+
SW
TG
BOOST
V
IN
INTV
CC
BG
GND
I
LIM
LTC3851
47pF
C
C
C
SS
0.1µF
C
C2
R
FREQ
R
C
1000pF
+
C
OUT
R1
R2
C
B
D
B
R
SENSE
M2
4.7µF
M1
+
C
IN
+
L1
V
IN
+
V
OUT
3851 F09
10
10
+
Figure 9. LTC3851 Layout Diagram
LTC3851
23
3851fb
APPLICATIONS INFORMATION
4. Does the (+) terminal of C
IN
connect to the drain of
the topside MOSFET(s) as closely as possible? This
capacitor provides the AC current to the MOSFET(s).
5. Is the INTV
CC
decoupling capacitor connected closely
between INTV
CC
and GND? This capacitor carries the
MOSFET driver peak currents. An addi tional 1F ceramic
capacitor placed immediately next to the INTV
CC
and
GND pins can help improve noise performance.
6. Keep the switching node (SW), top gate node (TG) and
boost node (BOOST) away from sensitive small-signal
nodes, especially from the voltage and current sensing
feedback pins. All of these nodes have very large and
fast moving signals and therefore should be kept on
the “output side” (Pin 9 to Pin 16) of the LTC3851EGN
and occupy minimum PC trace area.
PC Board Layout Debugging
It is helpful to use a DC-50MHz current probe to monitor
the current in the inductor while testing the circuit. Monitor
the output switching node (SW pin) to synchronize the
oscilloscope to the internal oscillator and probe the actual
output voltage as well. Check for proper performance over
the operating voltage and current range expected in the
application. The frequency of operation should be main-
tained over the input voltage range down to dropout and
until the output load drops below the low current opera-
tion threshold—typically 10% of the maximum designed
cur rent level in Burst Mode operation.
The duty cycle percentage should be maintained from cycle
to cycle in a well designed, low noise PCB imple mentation.
Variation in the duty cycle at a subharmonic rate can sug-
gest noise pick-up at the current or voltage sensing inputs
or inadequate loop compensation. Over compensation of
the loop can be used to tame a poor PC layout if regulator
bandwidth optimization is not required.
Reduce V
IN
from its nominal level to verify operation
of the regulator in dropout. Check the operation of the
undervoltage lockout circuit by further lowering V
IN
while
monitoring the outputs to verify operation.
Investigate whether any problems exist only at higher out-
put currents or only at higher input voltages. If problems
coincide with high input voltages and low output currents,
look for capacitive coupling between the BOOST, SW, TG
and possibly BG connections and the sensitive voltage
and current pins. The capacitor placed across the current
sensing pins needs to be placed immediately adjacent to
the pins of the IC. This capacitor helps to minimize the
effects of differential noise injection due to high frequency
capacitive coupling. If problems are encountered with
high current output loading at lower input voltages, look
for inductive coupling between C
IN
, the Schottky and the
top MOSFET to the sensitive current and voltage sensing
traces. In addition, investigate common ground path
voltage pickup between these components and the GND
pin of the IC.
Design Example
As a design example, assume V
IN
= 12V (nominal), V
IN
=
22V (maximum), V
OUT
= 1.8V, I
MAX
= 5A, and f = 250kHz.
Refer to Figure 13.
The inductance value is chosen fi rst based on a 30%
ripple current assumption. The highest value of ripple
current occurs at the maximum input voltage. Connect a
160k resistor between the FREQ/PLLFLTR and GND pins,
generating 250kHz op eration. The minimum inductance
for 30% ripple current is:
I
L
=
1
f
()
L
()
V
OUT
1
V
OUT
V
IN
A 4.7µH inductor will produce 28% ripple current and
a 3.3µH will result in 40%. The peak inductor current
will be the maximum DC value plus one-half the ripple
current, or 6A, for the 3.3µH value. Increasing the ripple
SENSE
+
SENSE
HIGH CURRENT PATH
3851 F10
CURRENT SENSE
RESISTOR
(R
SENSE
)
Figure 10. Kelvin Sensing R
SENSE
LTC3851
24
3851fb
current will also help ensure that the minimum on-time
of 90ns is not violated. The minimum on-time occurs at
maximum V
IN
:
t
ON(MIN)
=
V
OUT
V
IN(MAX)
f
()
=
1.8V
22V 250kHz
()
= 327ns
The R
SENSE
resistor value can be calculated by connect-
ing I
LIM
to INTV
CC
and using the maximum current sense
voltage specifi cation with some accommodation for toler-
ances. Tie I
LIM
to INTV
CC
.
R
SENSE
75mV
6A
= 0.0125Ω, so 0.01Ω is selected
Choosing 1% resistors: R1 = 25.5k and R2 = 32.4k yields
an output voltage of 1.816V.
The power dissipation on the topside MOSFET can be easily
estimated. Choosing a Fairchild FDS6982S dual MOSFET
results in: R
DS(ON)
= 0.035Ω/0.022Ω, C
MILLER
= 215pF. At
maximum input voltage with T (estimated) = 50°C:
P
MAIN
=
1.8V
22V
5
()
2
1+ 0.005
()
50°C 25°C
()
0.035Ω
()
+ 22V
()
2
5A
2
2Ω
()
215pF
()
1
5 2.3
+
1
2.3
250kHz
()
=185mW
APPLICATIONS INFORMATION
A short-circuit to ground will result in a folded back cur-
rent of:
I
SC
=
29mV
0.0125Ω
1
2
90ns 22V
()
3.3µH
= 2.02A
with a typical value of R
DS(ON)
and δ = (0.005/°C)(25°C)
= 0.125. The resulting power dissipated in the bottom
MOSFET is:
P
SYNC
=
22V
22V
2.02A
()
2
1.125
()
0.022Ω
()
=101.0mW
which is less than under full-load conditions.
C
IN
is chosen for an RMS current rating of at least 3A at
temperature. C
OUT
is chosen with an ESR of 0.02Ω for
low output ripple. The output ripple in continuous mode
will be highest at the maximum input voltage. The output
voltage ripple due to ESR is approximately:
V
ORIPPLE
= R
ESR
(∆I
L
) = 0.02Ω (2A) = 40mV
P-P

LTC3851IGN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Sync Buck Sw Reg Cntr
Lifecycle:
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