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STD15N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P15
December 2014
DocID027308 Rev 1
1/15
This is information on a product in full production.
www.st.com
STD15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
R
DS(on)
max.
I
D
STD15N60M2-EP
650 V
0.378 Ω
11 A
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Order code
Marking
Package
Packaging
STD15N60M2-EP
15N60M2EP
DPAK
Tube
DPAK
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Contents
STD15N60M2-EP
2/15
DocID027308 Rev 1
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................. 10
4.1 DPAK (TO-252) type A .................................................................... 11
5 Revision history ............................................................................ 14
STD15N60M2-EP
Electrical ratings
DocID027308 Rev 1
3/15
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
11
A
I
D
Drain current (continuous) at T
C
= 100 °C
7
A
I
DM
(1)
Drain current (pulsed)
44
A
P
TOT
Total dissipation at T
C
= 25 °C
110
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 11 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
(3)
V
DS
≤ 480 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
1.14
°C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb max
50
°C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 oz Cu
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetetive or not repetetive (pulse width limited by
T
jmax
)
2.8
A
E
AS
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
125
mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

STD15N60M2-EP

Mfr. #:
Buy STD15N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
Lifecycle:
New from this manufacturer.
Delivery:
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