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STD15N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P15
STD15N60M2-EP
Electrical characteristics
DocID027308 Rev 1
7/15
Figure 8: Static drain-source on-resistance
Figure 9: Normalized on-resistance vs
temperature
Figure 10: Gate charge vs. gate-source
voltage
Figure 11: Capacitance variations
Figure 12: Turn-off switching loss vs drain
current
Figure 13: Source-drain diode forward
characteristic
GIPG121220141431MT
RDS(on)
0.330
0.320
0
2
ID(A)
(Ω)
0.340
VGS=10V
4
0.350
8
6
0.360
10
1.4
1.0
0.6
0.2
-75
T
J
(°C)
-25
75
25
125
1.8
2.2
V
GS
= 10 V
R
DS(on)
(norm)
GIPG181120141628ALS
GIPG121220141425MT
VGS
6
4
2
0
0
8
Qg(nC)
(V)
8
12
10
VDD=480V
ID=11A
12
100
0
200
VDS
4
VDS
(V)
300
400
16
500
600
C
1000
10
1
0.1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
100
GIPG121220141441MT
GIPG121220141453MT
Eoff
4.4
0.5
1
ID(A)
(µJ)
2.5
1.5
2
3
4.6
4.8
5
5.2
5.4
3.5
V
DD
=400V, R
G
=4,7Ω,V
GS
=10V
GIPG161220141014MT
VSD
0
4
ISD(A)
(V)
2
10
6
8
0.5
0.6
0.7
TJ=-50°C
TJ=150°C
TJ=25°C
0.8
0.9
1
1.1
Test circuits
STD15N60M2-EP
8/15
DocID027308 Rev 1
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
AM01469v1
VDD
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
Vi ≤ VGS
2200 μ F
PW
IG = CONST
100 Ω
100 nF
D.U.T.
VG
STD15N60M2-EP
Test circuits
DocID027308 Rev 1
9/15
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
V
(BR)DSS
V
DD
V
DD
V
D
I
DM
I
D
AM01472v1
AM01473v1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
P1-P3P4-P6P7-P9P10-P12P13-P15

STD15N60M2-EP

Mfr. #:
Buy STD15N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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