ADF4116/ADF4117/ADF4118
Rev. D | Page 4 of 28
Parameter B Version
1
Y Version
2
Unit Test Conditions/Comments
POWER SUPPLIES
AV
DD
2.7 to 5.5 2.7 to 5.5 V min to V max
DV
DD
AV
DD
AV
DD
V
P
AV
DD
to 6.0 AV
DD
to 6.0 V min to V max AV
DD
V
P
≤ 6.0 V
I
DD
(AI
DD
+ DI
DD
)
6
ADF4116 5.5 mA max 4.5 mA typical
ADF4117 5.5 mA max 4.5 mA typical
ADF4118 7.5 7.5 mA max 6.5 mA typical
I
P
0.4 0.4 mA max T
A
= 25°C
Low-Power Sleep Mode 1 1 μA typ
NOISE CHARACTERISTICS
ADF4118 Normalized Phase Noise
Floor
7
−213 −213 dBc/Hz typ
Phase Noise Performance
8
@ VCO output
ADF4116 540 MHz Output
9
−89 −89 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4117 900 MHz Output
10
−87 −87 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4118 900 MHz Output
10
−90 −90 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4117 836 MHz Output
11
−78 −78 dBc/Hz typ @ 300 Hz offset and 30 kHz PFD frequency
ADF4118 1750 MHz Output
12
−85 −85 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4118 1750 MHz Output
13
−65 −65 dBc/Hz typ @ 200 Hz offset and 10 kHz PFD frequency
ADF4118 1960 MHz Output
14
−84 −84 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
Spurious Signals
ADF4116 540 MHz Output
10
−88/−99 −88/−99 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
ADF4117 900 MHz Output
10
−90/−104 −90/−104 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
ADF4118 900 MHz Output
10
−91/−100 −91/−100 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
ADF4117 836 MHz Output
11
−80/−84 −80/−84 dBc typ @ 30 kHz/60 kHz and 30 kHz PFD frequency
ADF4118 1750 MHz Output
12
−88/−90 −88/−90 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
ADF4118 1750 MHz Output
13
−65/−73 −65/−73 dBc typ @ 10 kHz/20 kHz and 10 kHz PFD frequency
ADF4118 1960 MHz Output
14
−80/−86 −80/−86 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
1
Operating temperature range for the B version is −40°C to +85°C.
2
Operating temperature range for the Y version is −40°C to +125°C.
3
This is the maximum operating frequency of the CMOS counters.
4
AC coupling ensures AV
DD
/2 bias. See Figure 35 for typical circuit.
5
Guaranteed by design.
6
T
A
= 25°C; AV
DD
= DV
DD
= 3 V; RF
IN
for ADF4116 = 540 MHz; RF
IN
for ADF4117, ADF4118 = 900 MHz.
7
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO, PN
TOT
, and subtracting 20logN (where N is the N
divider value) and 10logF
PFD
: PN
SYNTH
= PN
TOT
– 10logF
PFD
– 20logN.
8
The phase noise is measured with the EVAL-ADF411xEB and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the REF
IN
for the synthesizer
(f
REFOUT
= 10 MHz @ 0 dBm).
9
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 540 MHz; N = 2700; loop bandwidth = 20 kHz.
10
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 900 MHz; N = 4500; loop bandwidth = 20 kHz.
11
f
REFIN
= 10 MHz; f
PFD
= 30 kHz; offset frequency = 300 Hz; f
RF
= 836 MHz; N = 27867; loop bandwidth = 3 kHz.
12
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 1750 MHz; N = 8750; loop bandwidth = 20 kHz.
13
f
REFIN
= 10 MHz; f
PFD
= 10 kHz; offset frequency = 200 Hz; f
RF
= 1750 MHz; N = 175000; loop bandwidth = 1 kHz.
14
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 1960 MHz; N = 9800; loop bandwidth = 20 kHz.
ADF4116/ADF4117/ADF4118
Rev. D | Page 5 of 28
TIMING CHARACTERISTICS
AV
DD
= DV
DD
= 3 V ± 10%, 5 V ± 10%; AV
DD
≤ V
P
< 6.0 V; AGND = DGND = CPGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted.
Guaranteed by design, but not production tested.
Table 2.
Parameter Limit at T
MIN
to T
MAX
(B, Y Version) Unit Test Conditions/Comments
t
1
10 ns min DATA to CLK setup time
t
2
10 ns min DATA to CLK hold time
t
3
25 ns min CLK high duration
t
4
25 ns min CLK low duration
t
5
10 ns min CLK to LE setup time
t
6
20 ns min LE pulse width
CLK
DAT
A
LE
LE
DB20 (MSB) DB19 DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
2
t
4
t
6
t
1
t
3
00392-002
Figure 2. Timing Diagram
ADF4116/ADF4117/ADF4118
Rev. D | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +7 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
P
to GND
1
−0.3 V to +7 V
V
P
to AV
DD
−0.3 V to +5.5 V
Digital I/O Voltage to GND
1
−0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND
1
−0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
A, RF
IN
B to GND
1
−0.3 V to V
DD
+ 0.3 V
RF
IN
A to RF
IN
B ±320 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Extended (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature 150°C
TSSOP θ
JA
Thermal Impedance 112°C/W
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION

ADF4117BRU

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL SGL Integer-N 1.2 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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