MT9JBF25672AKIZ-1G4K1

Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 8: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
V
REFCA(DC)
Input reference voltage command/address bus 0.49 × V
DD
0.5 ×
V
DD
0.51 × V
DD
V
V
REFDQ(DC)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 ×
V
DD
0.51 × V
DD
V
I
VTT
Termination reference current from V
TT
–600 +600 mA
V
TT
Termination reference voltage (DC) –
command/address bus
0.49 × V
DD
-
20mV
0.5 ×
V
DD
0.51 × V
DD
+
20mV
V 1
I
I
Input leakage current;
Any input 0V V
IN
V
DD
; V
REF
in-
put 0V V
IN
0.95V (All other pins
not under test = 0V)
Address
inputs,
RAS#,CAS#,
WE#, S#,
CKE, ODT,
BA, CK, CK#
–18 0 18 µA
DM –2 0 2
I
OZ
Output leakage current;
0V V
OUT
V
DD
; DQ and ODT are
disabled; ODT is HIGH
DQ, DQS,
DQS#
–5 0 5 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–9 0 9 µA
T
A
Module ambient operating tem-
perature
Commercial 0 70 °C 2, 3
Industrial –40 85
T
C
DDR3 SDRAM component case op-
erating temperature
Commercial 0 85 °C 2, 3, 4
Industrial –40 95
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
4. The refresh rate is required to double when 85°C < T
C
95°C.
2GB (x72, ECC, SR) 244-Pin DDR3 SDRAM ULP Mini-UDIMM
Electrical Specifications
PDF: 09005aef83e0c154
jbf9c256x72akz.pdf - Rev. F 5/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB (x72, ECC, SR) 244-Pin DDR3 SDRAM ULP Mini-UDIMM
DRAM Operating Conditions
PDF: 09005aef83e0c154
jbf9c256x72akz.pdf - Rev. F 5/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 10: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
855 765 675 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
945 900 855 mA
Precharge power-down current: Slow exit I
DD2P0
108 180 108 mA
Precharge power-down current: Fast exit I
DD2P1
315 270 225 mA
Precharge quiet standby current I
DD2Q
360 315 270 mA
Precharge standby current I
DD2N
378 333 288 mA
Precharge standby ODT current I
DD2NT
450 405 360 mA
Active power-down current I
DD3P
360 315 270 mA
Active standby current I
DD3N
405 360 315 mA
Burst read operating current I
DD4R
1620 1440 1260 mA
Burst write operating current I
DD4W
1665 1485 1305 mA
Refresh current I
DD5B
1935 1800 1710 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
108 108 108 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
135 135 135 mA
All banks interleaved read current I
DD7
3915 3465 3015 mA
Reset current I
DD8
126 126 126 mA
2GB (x72, ECC, SR) 244-Pin DDR3 SDRAM ULP Mini-UDIMM
I
DD
Specifications
PDF: 09005aef83e0c154
jbf9c256x72akz.pdf - Rev. F 5/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT9JBF25672AKIZ-1G4K1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 244MUDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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