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PSMN1R0-40ULDX

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
03ne36
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
P
der
(%)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
aaa-008711
0 50 100 150 200
0
100
200
300
400
T
mb
(°C)
I
D
I
D
(A)(A)
(1)(1)
(1) 280A continuous current has been successfully
demonstrated during applications tests. Practically,
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-027868
10
-1
1 10 10
2
10
-1
1
10
10
2
10
3
10
4
V
DS
(V)
I
D
I
D
(A)(A)
DCDC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 µs100 µs
t
p
= 10 µst
p
= 10 µs
Limit R
DSon
= V
DS
/ I
D
Limit R
DSon
= V
DS
/ I
D
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 4 / 13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4 - 0.66 0.76 K/W
Fig. 5 - 50 - K/WR
th(j-a)
thermal resistance
from junction to
ambient
Fig. 6 - 125 - K/W
aaa-027867
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
Z
th(j-mb)
(K/W)(K/W)
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
P
t
t
p
T
t
p
δ =
T
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-005750
Fig. 5. PCB layout for thermal resistance junction to
ambient 1” square pad; FR4 Board; 2oz copper
aaa-005751
Fig. 6. PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 5 / 13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 40 - - VV
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C 36 - - V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C 1.05 1.7 2.2 V
ΔV
GS(th)
/ΔT gate-source threshold
voltage variation with
temperature
25 °C ≤ T
j
≤ 150 °C - -5.1 - mV/K
V
DS
= 32 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µAI
DSS
drain leakage current
V
DS
= 32 V; V
GS
= 0 V; T
j
= 125 °C - 9 - µA
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 10; Fig. 11
- 0.93 1.1 mΩ
V
GS
= 10 V; I
D
= 25 A; T
j
= 150 °C;
Fig. 10; Fig. 11
- - 1.93 mΩ
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 10; Fig. 11
- 1.1 1.4 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 150 °C;
Fig. 10; Fig. 11
- - 2.45 mΩ
R
G
gate resistance f = 1 MHz - 1.3 - Ω
Dynamic characteristics
I
D
= 25 A; V
DS
= 20 V; V
GS
= 10 V;
Fig. 12; Fig. 13
- 127 - nC
I
D
= 25 A; V
DS
= 20 V; V
GS
= 4.5 V;
Fig. 12; Fig. 13
- 59 - nC
Q
G(tot)
total gate charge
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V - 115 - nC
Q
GS
gate-source charge - 19 - nC
Q
GS(th)
pre-threshold gate-
source charge
- 12 - nC
Q
GS(th-pl)
post-threshold gate-
source charge
- 8 - nC
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 20 V; V
GS
= 4.5 V;
Fig. 12; Fig. 13
- 17 - nC
V
GS(pl)
gate-source plateau
voltage
I
D
= 25 A; V
DS
= 20 V; Fig. 12; Fig. 13 - 2.7 - V
C
iss
input capacitance - 8845 - pF
C
oss
output capacitance - 1878 - pF
C
rss
reverse transfer
capacitance
V
DS
= 20 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 14
- 382 - pF
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 6 / 13
P1-P3P4-P6P7-P9P10-P12P13-P13

PSMN1R0-40ULDX

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Manufacturer:
Nexperia
Description:
MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology
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