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PSMN1R0-40ULDX

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
Symbol Parameter Conditions Min Typ Max Unit
t
d(on)
turn-on delay time - 52 - ns
t
r
rise time - 62 - ns
t
d(off)
turn-off delay time - 65 - ns
t
f
fall time
V
DS
= 20 V; R
L
= 0.8 Ω; V
GS
= 4.5 V;
R
G(ext)
= 5 Ω
- 38 - ns
Q
oss
output charge V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
T
j
= 25 °C
- 51 - nC
Source-drain diode
V
SD
source-drain voltage I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 15 - 0.78 1.2 V
t
rr
reverse recovery time - 48 - ns
Q
r
recovered charge [1] - 67 - nC
t
a
reverse recovery rise
time
- 28.6 - ns
t
b
reverse recovery fall
time
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; Fig. 16
- 23.8 - ns
[1] includes capacitive recovery
aaa-008714
0 0.5 1 1.5 2
0
40
80
120
160
200
V
DS
(V)
I
D
I
D
(A)(A)
2.4 V2.4 V
2.6 V2.6 V
2.8 V2.8 V
V
GS
= 3 VV
GS
= 3 V
3.5 V3.5 V
4.5 V4.5 V
10 V10 V
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-008715
0 2 4 6 8 10 12 14 16
0
2
4
6
8
V
GS
(V)
R
DSon
R
DSon
(mΩ)(mΩ)
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 7 / 13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
aaa-008716
0 0.8 1.6 2.4 3.2 4
0
100
200
300
400
V
GS
(V)
I
D
I
D
(A)(A)
T
j
= 25°CT
j
= 25°C150°C150°C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
aaa-008717
0 40 80 120 160 200
0
1
2
3
4
5
I
D
(A)
R
DSon
R
DSon
(mΩ)(mΩ)
2.8 V2.8 V 3 V3 V
3.5 V3.5 V
4.5 V4.5 V
10 V10 V
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-013039
-60 -30 0 30 60 90 120 150 180
0
0.4
0.8
1.2
1.6
2
T
j
(°C)
aa
10 V10 V
V
GS
= 4.5 VV
GS
= 4.5 V
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 12. Gate charge waveform definitions
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 8 / 13
Nexperia
PSMN1R0-40ULD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using
NextPower-S3 Schottky-Plus technology
aaa-008718
0 20 40 60 80 100 120 140
0
2
4
6
8
10
Q
G
(nC)
V
GS
V
GS
(V)(V)
20 V20 V
V
DS
= 8 VV
DS
= 8 V
32 V32 V
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
aaa-008719
10
-1
1 10 10
2
10
10
2
10
3
10
4
10
5
V
DS
(V)
CC
(pF)(pF)
C
iss
C
iss
C
oss
C
oss
C
rss
C
rss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-008720
0 0.2 0.4 0.6 0.8 1 1.2
1
10
10
2
10
3
V
SD
(V)
I
S
I
S
(A)(A)
T
j
= 25°CT
j
= 25°C150°C150°C
Fig. 15. Source current as a function of source-drain
voltage; typical values
003aal160
0
t (s)
I
D
(A)
I
RM
0.25 I
RM
t
a
t
b
t
rr
Fig. 16. Reverse recovery timing definition
PSMN1R0-40ULD All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 May 2018 9 / 13
P1-P3P4-P6P7-P9P10-P12P13-P13

PSMN1R0-40ULDX

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Buy PSMN1R0-40ULDX
Manufacturer:
Nexperia
Description:
MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology
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New from this manufacturer.
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