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LET9120

P1-P3P4-P6P7-P9P10-P11
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
October 2010 Doc ID 15509 Rev 5 1/11
11
LET9120
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ P
OUT
= 120 W with 18 dB gain @ 860 MHz
■ BeO-free package
Description
The LET9120 is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz.
Figure 1. Pin connection
M246
Epoxy sealed
1-2 Drain
4-5 Gate
3 Source
12
45
Table 1. Device summary
Order code Package Branding
LET9120 M246 LET9120
www.st.com
Contents LET9120
2/11 Doc ID 15509 Rev 5
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
LET9120 Electrical data
Doc ID 15509 Rev 5 3/11
1 Electrical data
1.1 Maximum ratings
T
CASE
= 25 °C
1.2 Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 80 V
V
GS
Gate-source voltage - 0.5 / + 15 V
I
D
Drain current 18 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 200 W
T
J
Max. operating junction temperature 200 °C
T
STG
Storage temperature - 65 to + 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 0.65 °C/W
P1-P3P4-P6P7-P9P10-P11

LET9120

Mfr. #:
Buy LET9120
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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