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LET9120

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics LET9120
4/11 Doc ID 15509 Rev 5
2 Electrical characteristics
T
CASE
= + 25 °C
2.1 Static
2.2 Dynamic
Table 4. Static (per section)
Symbol Test conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V I
DS
= 10 mA 80 V
I
DSS
V
GS
= 0 V V
DS
= 28 V 1 µA
I
GSS
V
GS
= 5 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 28 V
I
D
= 100 mA 2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 3 A 0.9 1.2 V
G
FS
V
DS
= 10 V I
D
= 3 A 2.5 mho
C
ISS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz 58 pF
C
OSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz 30 pF
C
RSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz 0.7 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 32 V I
DQ
= 400 mA P
IN
= 2.5 W 120 150
-
W
G
PS
V
DD
= 32 V I
DQ
= 400 mA P
OUT
= 150 W 16 18 dB
η
D
V
DD
= 32 V I
DQ
= 400 mA P
OUT
= 150 W 60 70 %
Load
Mismatch
V
DD
= 32 V I
DQ
= 400 mA P
OUT
= 160 W @ 860 MHz
All phase angles
20:1 VSWR
Table 6. Impedance data
Frequency Mhz
Z source Ω (As measured in the
circuit gate to gate)
Z load Ω (As measured in the circuit
drain to drain)
860 1.5 + j 2.2 6.2 + j 5.2
LET9120 Typical performance
Doc ID 15509 Rev 5 5/11
3 Typical performance
Figure 2. Gain & efficiency vs. output power Figure 3. Gain vs. output power & bias
current
Figure 4. Output power & efficiency vs. input
power
Figure 5. Output power vs. drain supply
voltage
16
17
18
19
20
21
22
23
24
0 20406080100120140160
Output Power (W)
Gain (dB)
0
10
20
30
40
50
60
70
80
Efficiency (%)
Gain
Efficiency
Vdd = 28 V
Idq = 400 mA
Freq = 400 MHz
16
17
18
19
20
21
22
23
24
0 20406080100120140160
Output Power (W)
Gain (dB)
0
10
20
30
40
50
60
70
80
Efficiency (%)
Gain
Efficiency
Vdd = 28 V
Idq = 400 mA
Freq = 400 MHz
12
14
16
18
20
22
24
26
0 40 80 120 160 200
Output power (W)
Gain (dB)
Idq = 100 mA Idq = 400 mA Idq = 800 mA
Vdd = 32 V
Freq = 860 MHz
12
14
16
18
20
22
24
26
0 40 80 120 160 200
Output power (W)
Gain (dB)
Idq = 100 mA Idq = 400 mA Idq = 800 mA
Vdd = 32 V
Freq = 860 MHz
0
20
40
60
80
100
120
140
160
180
200
0 0.8 1.6 2.4 3.2 4 4.8
Input power (W)
Output power (W)
0
20
40
60
80
100
Efficiency (%)
Pout Efficiency
Vdd = 32 V
Idq = 400 mA
Freq = 860 MHz
0
20
40
60
80
100
120
140
160
180
200
0 0.8 1.6 2.4 3.2 4 4.8
Input power (W)
Output power (W)
0
20
40
60
80
100
Efficiency (%)
Pout Efficiency
Vdd = 32 V
Idq = 400 mA
Freq = 860 MHz
0
20
40
60
80
100
120
140
160
180
200
22 24 26 28 30 32 34
Supply voltage (V)
Output power (W)
Pin = 1.5 W Pin = 2.5 W Pin = 3.5 W
Vdd = 32 V
Idq = 400 mA
Freq = 860 MHz
0
20
40
60
80
100
120
140
160
180
200
22 24 26 28 30 32 34
Supply voltage (V)
Output power (W)
Pin = 1.5 W Pin = 2.5 W Pin = 3.5 W
Vdd = 32 V
Idq = 400 mA
Freq = 860 MHz
Test circuit LET9120
6/11 Doc ID 15509 Rev 5
4 Test circuit
Figure 6. Test circuit schematic - 860 MHz
DUT
C15 C16
C17 C18
TL16
C19
C20
R4
R3
R2
R1
VDD
TL4
C13
TL8
C4
C5C2
TL9
Tr1
D
S
G
Vdd
Tr2
D
S
G
Vdd
TL15TL14
C6
C10 C9
FB2
TL13
VDD
FB1
C7C8
Ballun2
Output
TL12TL11TL10
Ballun1
C3
C1
Input
C14C12
C11
TL5 TL6 TL7
TL3TL2TL1
Vgg
Vgg
AM07851v1
Table 7. Circuit component list
Item Q.ty Part number Vender Description
R1, R3 2 CR1206-8W-130JB VENKEL 13 Ω, 1/8 W surface mount chip resistor
R2, R4 2 CR1206-8W-122JB VENKEL 1.2 kΩ, 1/8 W surface mount chip resistor
R5, R6 2 CR1206-8W-250JB VENKEL 25 Ω, 1/8 W surface mount chip resistor
B1, B2 2 2743021447 FAIR-RITE CORP Surface mount EMI shield bead
C1, C3, C7,
C9
4 100 µF, 63 V electrolytic capacitor
C2, C4, C5,
C6
4 ATC100B910XXXX ATC 91 pF chip capacitor
C8, C10 2 C1812X7R501-104KNE VENKEL
0.1 F 500 V surface mount ceramic chip
capacitor
C11, C12 2 ATC100B620XXXX ATC 62 pF chip capacitor
C13, C14 2 ATC100B151XXXX ATC 150 pF chip capacitor
C15 1 ATC100B110XXXX ATC 11 pF chip capacitor
C16 1 ATC100B7R5XXXX ATC 7.5 pF chip capacitor
C17 1 ATC100B1R1XXXX ATC 1.1 pF chip capacitor
C18 1 27291PC JOHANSON 0.8 - 8 pF giga trim variable capacitor
P1-P3P4-P6P7-P9P10-P11

LET9120

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Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
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