BUK6E3R2-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 6 September 2010 3 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
4. Limiting values
[1] Accumulated pulse duration not to exceed 5mins.
[2] -16V accumulated duration not to exceed 168 hrs.
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 55 V
V
GS
gate-source voltage Pulsed
[1]
-20 20 V
DC
[2]
-16 16 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[3]
- 120 A
T
mb
=100°C; V
GS
= 10 V; see Figure 1
[3]
- 120 A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 3
- 861 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 306 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[3]
- 120 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - 861 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=120A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
- 724 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
[4][5][6]
--J
