BUK6E3R2-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 6 September 2010 7 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-67-ns
Q
r
recovered charge - 176 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae201
0
25
50
75
100
0246
V
GS
(V)
I
D
(A)
T
j
= 25 °CT
j
= 175 °C
003aae200
0
20
40
60
80
100
0
0.5 1 1.5 2
V
DS
(V)
I
D
(A)
4
3.4
3.2
10 5
V
GS
(V) = 3.6
3.8
003aae199
0
50
100
150
200
250
0 20406080100
I
D
(A)
g
fs
(S)
003aae290
0
2
4
6
8
10
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)