2001 Feb 05 2
NXP Semiconductors Product specification
MMIC variable gain amplifier BGA2031/1
FEATURES
High gain
Excellent adjacent channel power rejection
Small SMD package
Low dissipation.
APPLICATIONS
General purpose variable gain amplifier for low voltage
and medium power
Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 6-pin SOT363 SMD plastic package for low
voltage medium power applications.
PINNING
PIN DESCRIPTION
1RFin
2CTRL
3V
S1
4V
S2
+RFout
5GND
6GND
handbook, halfpage
MAM440
RFin
V
S2
+RFout
V
S1
CTRL
GND
Top view
BIAS
CIRCUIT
123
654
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S1
supply voltage 3 3.3 V
V
S2
supply voltage 3 3.3 V
I
S
supply current; pins 3 and 4 V
CTRL
=0 0 10 A
V
CTRL
=2.7V; V
S
=3V 51 63 mA
V
CTRL
=2.4V; V
S
=3V 30 37 mA
P
L
load power at 1 dB gain compression point;
f=1.9GHz
13 dBm
ACPR adjacent channel power rejection f = 1.9 GHz; P
L
=10dBm 49 dBc
f=836MHz; P
L
=8dBm 48 dBc
G
p
power gain f = 1.9 GHz; P
L
=12dBm 23 dB
f=836MHz; P
L
=8dBm 24 dB
G gain control range f = 836 MHz; P
L
=8dBm 62 dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
