2001 Feb 05 4
NXP Semiconductors Product specification
MMIC variable gain amplifier BGA2031/1
CHARACTERISTICS
T
j
=25C; Z
S
=Z
L
=50; V
S
= 3 V; unless otherwise specified.
Note
1. G
CS
=(GatV
CTRL
=2.5V GatV
CTRL
=1.5V)/(V
CTRL
=2.5V V
CTRL
=1.5V)
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency range 800 2500 MHz
V
S1
supply voltage 2.7 3 3.3 V
V
S2
supply voltage 2.7 3 3.3 V
I
S
supply current;
pins 3 and 4
V
CTRL
=0; P
D
=0mW 010A
V
CTRL
=2.7V; V
S
=3V; P
D
= 0 mW 37 51 63 mA
V
CTRL
=2.4V; V
S
=3V; P
D
= 0 mW 23 30 37 mA
I
CTRL
control current V
CTRL
= 2.7 V 0.7 0.92 1.1 mA
f=1900MHz
f frequency range 1850 1950 MHz
G
p
power gain V
CTRL
=2.7V; P
L
=12dBm 23 dB
G gain control range 0 < V
CTRL
<2.7V 56 dB
G
CS
gain control slope note 1 21 dB/V
ACPR adjacent channel power
rejection
1.23 MHz offset; BW
ACP
=30kHz;
BW
carrier
=1.23MHz; P
L
=10dBm
49 dBc
1.98 MHz offset; BW
ACP
=30kHz;
BW
carrier
=1.23MHz; P
L
=10dBm
74 dBc
P
L
load power at 1 dB gain compression point 13 dBm
VSWR
IN
input VSWR V
CTRL
=2.7V 1:3.5
VSWR
OUT
output VSWR V
CTRL
=2.7V 1:1.3
f=836MHz
f frequency range 824 849 MHz
G
p
power gain V
CTRL
=2.7V; P
L
=8dBm 24 dB
G gain control range 0 < V
CTRL
<2.7V 62 dB
G
CS
gain control slope note 1 22 dB/V
ACPR adjacent channel power
rejection
885 kHz offset; BW
ACP
=30kHz;
BW
carrier
=1.23MHz; P
L
=8dBm
49 dBc
1.98 MHz offset; BW
ACP
=30kHz;
BW
carrier
=1.23MHz; P
L
=8dBm
74 dBc
P
L
load power at 1 dB gain compression point 11 dBm
VSWR
IN
input VSWR V
CTRL
=2.7V 1:2
VSWR
OUT
output VSWR V
CTRL
=2.7V 1:1.4
