74LV03D,118

Philips Semiconductors Product data
74LV03Quad 2-input NAND gate
2003 Mar 03
3
LOGIC SYMBOL
1
2
4
5
9
10
12
13
3
6
8
11
1Y
2Y
3Y
4Y
1A
1B
2A
2B
3A
3B
4A
4B
SV00355
LOGIC SYMBOL (IEEE/IEC)
1
2
3
4
5
6
8
9
10
11
12
13
&
&
&
&
SV00356
LOGIC DIAGRAM
A
GND
Y
B
SV00357
70
FUNCTION TABLE
INPUTS OUTPUT
nA nB nY
L L Z
L H Z
H L Z
H H L
NOTES:
H = HIGH voltage level
L = LOW voltage level
Z = High impedance OFF-state
Philips Semiconductors Product data
74LV03Quad 2-input NAND gate
2003 Mar 03
4
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CC
DC supply voltage See Note1 1.0 3.3 5.5 V
V
I
Input voltage 0 V
CC
V
V
O
Output voltage 0 V
CC
V
T
amb
Operating ambient temperature range in free air See DC and AC characteristics
–40
–40
+85
+125
°C
V
CC
= 1.0 V to 2.0 V 500 ns/V
t t
In
p
ut rise and fall times
V
CC
= 2.0 V to 2.7 V 200
t
r
,
t
f
Inp
u
t
rise
and
fall
times
V
CC
= 2.7 V to 3.6 V 100
V
CC
= 3.6 V to 5.5 V 50
NOTES:
1 The LV is guaranteed to function down to V
CC
= 1.0 V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2 V to
V
CC
= 5.5 V.
ABSOLUTE MAXIMUM RATINGS
1,
2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
±I
IK
DC input diode current V
I
< –0.5 or V
I
> V
CC
+ 0.5 V 20 mA
±I
OK
DC output diode current V
O
< –0.5 or V
O
> V
CC
+ 0.5 V 50 mA
±I
O
DC output source or sink current
– standard outputs
–0.5V < V
O
< V
CC
+ 0.5 V
25
mA
±I
GND
,
±I
CC
DC V
CC
or GND current for types with
–standard outputs 50
mA
T
stg
Storage temperature range –65 to +150 °C
P
TOT
Power dissipation per package
–plastic mini-pack (SO)
for temperature range: –40 °C to +125 °C
above +70 °C derate linearly with 8 mW/K
500 mW
NOTES:
1 Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2 The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors Product data
74LV03Quad 2-input NAND gate
2003 Mar 03
5
DC CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
–40°C to +85°C –40°C to +125°C
UNIT
MIN TYP
1
MAX MIN MAX
V
CC
= 1.2 V 0.9 0.9
V
IH
HIGH level Input
V
CC
= 2.0 V 1.4 1.4
V
V
IH
voltage
V
CC
= 2.7 V to 3.6 V 2.0 2.0
V
V
CC
= 4.5 V to 5.5 V 0.7*V
CC
0.7*V
CC
V
CC
= 1.2 V 0.3 0.3
V
IL
LOW level Input
V
CC
= 2.0 V 0.6 0.6
V
V
IL
voltage
V
CC
= 2.7 V to 3.6 V 0.8 0.8
V
V
CC
= 4.5 V to 5.5 V 0.3*V
CC
0.3*V
CC
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
–I
O
= 100 µA 1.2
HIGH level output
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100 µA 1.8 2.0 1.8
V
OH
HIGH
l
eve
l
ou
t
pu
t
voltage
;
all out
p
uts
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
–I
O
= 100 µA 2.5 2.7 2.5
V
voltage
all
out uts
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100 µA 2.8 3.0 2.8
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
–I
O
= 100 µA 4.3 4.5 4.3
V
OH
HIGH level output
voltage;
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 6 mA 2.40 2.82 2.20
V
V
OH
g
STANDARD
outputs
V
CC
= 4.5 V;V
I
= V
IH
or V
IL;
–I
O
= 12 mA 3.60 4.20 3.50
V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100 µA 0
LOW level output
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100 µA 0 0.2 0.2
V
OL
LOW
l
eve
l
ou
t
pu
t
voltage
;
all out
p
uts
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100 µA 0 0.2 0.2
V
voltage
all
out uts
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100 µA 0 0.2 0.2
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 100 µA 0 0.2 0.2
V
OL
LOW level output
voltage;
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 6 mA 0.25 0.40 0.50
V
V
OL
g
STANDARD
outputs
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 12 mA 0.35 0.55 0.65
V
I
OZ
HIGH level output
leakage current
V
CC
= 2.0 V to 3.6 V; V
I
= V
IL;
V
O
= V
CC
or GND
5.0 10 µA
I
OZ
HIGH level output
leakage current
V
CC
= 2.0 V to 3.6 V; V
I
= V
IL;
V
O
= 6.0 V
2
10 20 µA
I
I
Input leakage
current
V
CC
= 5.5 V; V
I
= V
CC
or GND 1.0 1.0 µA
I
CC
Quiescent supply
current; SSI
V
CC
= 5.5 V; V
I
= V
CC
or GND; I
O
= 0 20.0 40 µA
I
CC
Additional
quiescent supply
current per input
V
CC
= 2.7 V to 3.6 V; V
I
= V
CC
– 0.6 V 500 850 µA
NOTES:
1 All typical values are measured at T
amb
= 25 °C.
2 The maximum operating output voltage (V
O(max)
) is 6.0 V.

74LV03D,118

Mfr. #:
Manufacturer:
Nexperia
Description:
Logic Gates 3.3V QUAD 2-INPUT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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