SiHU2N80E
www.vishay.com
Vishay Siliconix
S18-0587-Rev. B, 18-Jun-2018
1
Document Number: 91986
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) R
on
x Q
g
• Low input capacitance (C
iss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 0.9 A
c. 1.6 mm from case
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 850
R
DS(on)
typ. () at 25 °C V
GS
= 10 V 2.38
Q
g
max. (nC) 90
Q
gs
(nC) 11
Q
gd
(nC) 19
Configuration Single
N-Channel MOSFET
G
D
S
IPAK
(TO-251)
G
D
S
D
ORDERING INFORMATION
Package IPAK (TO-251)
Lead (Pb)-free and halogen-free SiHU2N80E-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
800
V
Gate-source voltage V
GS
± 30
Continuous drain current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
2.8
AT
C
= 100 °C 1.8
Pulsed drain current
a
I
DM
5
Linear derating factor 0.5 W/°C
Single pulse avalanche energy
b
E
AS
14 mJ
Maximum power dissipation P
D
62.5 W
Operating junction and storage temperature range T
J
, T
stg
-55 to +150 °C
Drain-source voltage slope T
J
= 125 °C
dV/dt
70
V/ns
Reverse diode dV/dt
d
0.13
Soldering recommendations (peak temperature)
c
For 10 s 300 °C