SIHU2N80E-GE3

SIHU2N80E-GE3
Mfr. #:
SIHU2N80E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHU2N80E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU2N80E-GE3 DatasheetSIHU2N80E-GE3 Datasheet (P4-P6)SIHU2N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHU2N80E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2.8 A
Rds On - Drain-Source Resistance:
2.38 Ohms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
9.8 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Fall Time:
27 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.011993 oz
Tags
SIHU, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
E Series Power MOSFET N-Channel 800V VDS ±30V VGS 2.8A ID 3-Pin TO-251
***ment14 APAC
MOSFET, N-CH, 800V, 2.8A, TO-251
***nell
MOSFET, N-CH, 800V, 2.8A, TO-251; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 62.5W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHU2N80E-GE3
DISTI # SIHU2N80E-GE3-ND
Vishay SiliconixMOSFET N-CH 800V 2.8A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
3040In Stock
  • 6000:$0.6354
  • 3000:$0.6688
  • 500:$0.9077
  • 100:$1.0988
  • 25:$1.3376
  • 10:$1.4090
  • 1:$1.5800
SIHU2N80E-GE3
DISTI # SIHU2N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET N-Channel 800V VDS ±30V VGS 2.8A ID 3-Pin TO-251 - Tape and Reel (Alt: SIHU2N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.5829
  • 18000:$0.5989
  • 12000:$0.6159
  • 6000:$0.6419
  • 3000:$0.6619
SIHU2N80E-GE3
DISTI # 59AC7416
Vishay IntertechnologiesN-CHANNEL 800V0
  • 2500:$0.6280
  • 1000:$0.6830
  • 500:$0.7920
  • 100:$0.9060
  • 50:$1.0300
  • 25:$1.1300
  • 10:$1.2400
  • 1:$1.6000
SIHU2N80E-GE3
DISTI # 78-SIHU2N80E-GE3
Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2982
  • 1:$1.6000
  • 10:$1.3200
  • 100:$1.0100
  • 500:$0.8650
  • 1000:$0.6830
SIHU2N80E-GE3
DISTI # 2772349
Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, TO-251
RoHS: Compliant
50
  • 6000:$0.9600
  • 3000:$1.0100
  • 500:$1.3700
  • 100:$1.6600
  • 25:$2.0200
  • 10:$2.1300
  • 1:$2.3800
SIHU2N80E-GE3
DISTI # 2772349
Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, TO-25150
  • 500:£0.6270
  • 250:£0.6800
  • 100:£0.7320
  • 10:£0.9500
  • 1:£1.1600
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of SIHU2N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.60
$1.60
10
$1.32
$13.20
100
$1.01
$101.00
500
$0.86
$432.50
1000
$0.68
$683.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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