PartNumber | SIHU2N80E-GE3 | SIHU3N50DA-GE3 | SIHU3N50D-E3 |
Description | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 500 V | 500 V |
Id Continuous Drain Current | 2.8 A | 3 A | 3 A |
Rds On Drain Source Resistance | 2.38 Ohms | 2.6 Ohms | 3.2 Ohms |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V | 5 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 9.8 nC | 6 nC | 6 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 62.5 W | 69 W | 69 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | E | D | D |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 27 ns | 13 ns | 13 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7 ns | 9 ns | 9 ns |
Factory Pack Quantity | 75 | 75 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 11 ns | 11 ns |
Typical Turn On Delay Time | 11 ns | 12 ns | 12 ns |
Unit Weight | 0.011993 oz | 0.011993 oz | 0.011640 oz |
Forward Transconductance Min | - | 1 S | - |
Part # Aliases | - | - | SIHU3N50D-GE3 |