SIHU4N80E-GE3

Mfr. #:: SIHU4N80E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Lifecycle:: New from this manufacturer.
Datasheet:: SIHU4N80E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHU4N80E-GE3 Datasheet SIHU4N80E-GE3 Datasheet (P4-P6)SIHU4N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIHU4N80E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 4.3 A

Rds On - Drain-Source Resistance:: 1.1 Ohms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 16 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 69 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Series:: E

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 1.5 S

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 7 ns

Factory Pack Quantity:: 75

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 12 ns

Tags: SIHU, SIH

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHU4N80E-GE3 Description

***et: E Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251

***ment14 APAC: MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W

***ark: Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

SIHU4N80E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHU4N80E-GE3 DISTI # SIHU4N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-251 RoHS: Compliant Min Qty: 1 Container: Tube	3000In Stock	6000:$0.8599 3000:$0.8930 500:$1.1576 100:$1.4090 25:$1.6536 10:$1.7530 1:$1.9500
SIHU4N80E-GE3 DISTI # SIHU4N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251 - Tape and Reel (Alt: SIHU4N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8119 18000:$0.8339 12000:$0.8579 6000:$0.8949 3000:$0.9219
SIHU4N80E-GE3 DISTI # 78AC6526	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	3000	1000:$0.9280 500:$1.1200 100:$1.2800 50:$1.4100 25:$1.5300 10:$1.6600 1:$1.9900
SIHU4N80E-GE3 DISTI # 78-SIHU4N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	2993	1:$1.9700 10:$1.6400 100:$1.2700 500:$1.1100 1000:$0.9190
SIHU4N80E-GE3 DISTI # 2932937	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W RoHS: Compliant	3000	1000:$1.4300 500:$1.5200 250:$1.7800 100:$2.1600 10:$2.7600 1:$3.3400
SIHU4N80E-GE3 DISTI # 2932937	Vishay Intertechnologies	MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W	3000	500:£0.8050 250:£0.8630 100:£0.9210 10:£1.2200 1:£1.6200

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SIHU4N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.97~~; ~~$1.97~~

10: ~~$1.64~~; ~~$16.40~~

100: ~~$1.27~~; ~~$127.00~~

500: ~~$1.11~~; ~~$555.00~~

1000: ~~$0.92~~; ~~$919.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIHU4N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes