OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHU7N60E-GE3

SIHU7N60E-GE3
Mfr. #:
SIHU7N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHU7N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU7N60E-GE3 DatasheetSIHU7N60E-GE3 Datasheet (P4-P6)SIHU7N60E-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIHU7N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
609 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.011640 oz
Tags
SIHU7, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***m
    R***m
    LB

    item received thanks to the seller

    2019-03-18
    A***V
    A***V
    RU

    Everything works

    2019-04-06
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin IPAK
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-251-3
***i-Key
MOSFET N-CH 600V 7A TO-251
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-251
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.8363
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK (Alt: SIHU7N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.6979
  • 500:€0.7069
  • 100:€0.7189
  • 50:€0.7299
  • 25:€0.8259
  • 10:€1.0179
  • 1:€1.4189
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7559
  • 18000:$0.7769
  • 12000:$0.7989
  • 6000:$0.8329
  • 3000:$0.8579
SIHU7N60E-GE3
DISTI # 68W7074		Vishay IntertechnologiesMOSFET, N CH, 600V, 7A, TO-251-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 12000:$0.7320
  • 6000:$0.8260
  • 3000:$0.8680
  • 1:$0.8740
SIHU7N60E-GE3
DISTI # 68W7073		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 7A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.0900
  • 500:$1.2800
  • 250:$1.4600
  • 100:$1.6400
  • 50:$1.8200
  • 25:$1.9700
  • 1:$2.0600
SIHU7N60E-GE3
DISTI # 63W4120		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes1488
  • 2500:$0.8070
  • 1000:$0.8960
  • 500:$0.9990
  • 100:$1.1000
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4200
  • 1:$1.7100
SIHU7N60E-GE3
DISTI # 78-SIHU7N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.7970
  • 6000:$0.7680
SIHU7N60E-E3
DISTI # 78-SIHU7N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.9000
  • 6000:$0.8660
  • 9000:$0.8330
SIHU7N60E-GE3Vishay Intertechnologies 2100
    SIHU7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant    		Americas -
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK
      RoHS: Compliant      		1488
      • 100:$1.8200
      • 10:$2.3400
      • 1:$2.8200
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK1670
      • 500:£0.8830
      • 250:£0.9540
      • 100:£1.0200
      • 25:£1.3100
      • 5:£1.4300
      Image Part # Description
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHU7N60E

      Mfr.#: SIHU7N60E

      OMO.#: OMO-SIHU7N60E-1190

      		 New and Original
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 7A TO-251
      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of SIHU7N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      3000
      $0.80
      $2 391.00
      6000
      $0.77
      $4 608.00
      12000
      $0.74
      $8 856.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
      Start with
      Newest Products
      • -12 V and -20 V P-Channel Gen III MOSFETs
        -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Compare SIHU7N60E-GE3
        Compare SIHU7N60E-GE3
        SIHU7N60E vs SIHU7N60EE3 vs SIHU7N60EGE3
      • Smart Load Switches
        Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      More Newest Products
      Top