SiHB22N60E
www.vishay.com
Vishay Siliconix
S13-0509-Rev. E, 11-Mar-13
1
Document Number: 91472
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Low Figure-of-Merit (FOM) R
on
x Q
g
• Low Input Capacitance (C
iss
)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Q
g
)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions please see
www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
•Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 5.1 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
max. at 25 °C ()V
GS
= 10 V 0.18
Q
g
max. (nC) 86
Q
gs
(nC) 11
Q
gd
(nC) 24
Configuration Single
ORDERING INFORMATION
Package D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHB22N60E-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
600
V
Gate-Source Voltage
V
GS
± 20
Gate-Source Voltage AC (f > 1 Hz) 30
Continuous Drain Current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
21
AT
C
= 100 °C 13
Pulsed Drain Current
a
I
DM
56
Linear Derating Factor 1.8 W/°C
Single Pulse Avalanche Energy
b
E
AS
367 mJ
Maximum Power Dissipation P
D
227 W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150 °C
Drain-Source Voltage Slope T
J
= 125 °C
dV/dt
37
V/ns
Reverse Diode dV/dt
d
11
Soldering Recommendations (Peak Temperature) for 10 s 300
c
°C