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SIHB22N60ET5-GE3

SIHB22N60ET5-GE3
Mfr. #:
SIHB22N60ET5-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds E Series D2PAK TO-263
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB22N60ET5-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET5-GE3 DatasheetSIHB22N60ET5-GE3 Datasheet (P4-P6)SIHB22N60ET5-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHB22N60ET5-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
180 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
227 W
Configuration:
Single
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
66 ns
Typical Turn-On Delay Time:
18 ns
Unit Weight:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 21A TO263
***ark
N-Channel 600V
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$2.5796
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.7900
  • 4800:$1.8900
  • 1600:$1.9900
  • 3200:$1.9900
  • 800:$2.0900
SIHB22N60ET5-GE3
DISTI # 78-SIHB22N60ET5-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
RoHS: Compliant		0
  • 800:$2.0800
  • 2400:$1.9700
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Mfr.#: SIHB22N60E

OMO.#: OMO-SIHB22N60E-1190

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Mfr.#: SIHB22N60SE3

OMO.#: OMO-SIHB22N60SE3-1190

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Mfr.#: SIHB22N65E

OMO.#: OMO-SIHB22N65E-1190

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Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of SIHB22N60ET5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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