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SIHB22N60AEL-GE3

SIHB22N60AEL-GE3
Mfr. #:
SIHB22N60AEL-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB22N60AEL-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60AEL-GE3 DatasheetSIHB22N60AEL-GE3 Datasheet (P4-P6)SIHB22N60AEL-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHB22N60AEL-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
180 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
41 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
208 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
EL
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
15 S
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
86 ns
Typical Turn-On Delay Time:
27 ns
Tags
SIHB22N60, SIHB22, SIHB2, SIHB, SIH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB22N60AEL-GE3
DISTI # SIHB22N60AEL-GE3-ND		Vishay SiliconixMOSFET N-CHAN 600V
RoHS: Compliant
Min Qty: 1
Container: Tube		100In Stock
  • 3000:$2.0720
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60AEL-GE3
DISTI # SIHB22N60AEL-GE3		Vishay Intertechnologies600 V EL SERIES POWER MOSFET - Tape and Reel (Alt: SIHB22N60AEL-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.7900
  • 6000:$1.8900
  • 2000:$1.9900
  • 4000:$1.9900
  • 1000:$2.0900
SIHB22N60AEL-GE3
DISTI # 59AC7370		Vishay IntertechnologiesN-CHANNEL 600V0
  • 2500:$1.8800
  • 1000:$2.0300
  • 500:$2.2800
  • 100:$2.5200
  • 50:$2.8500
  • 25:$3.0800
  • 10:$3.3300
  • 1:$3.7600
SIHB22N60AEL-GE3
DISTI # 78-SIHB22N60AEL-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		948
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2500:$1.9600
SIHB22N60AEL-GE3
DISTI # 2932919		Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, 150DEG C, 208W
RoHS: Compliant		49
  • 500:£2.2700
  • 250:£2.5500
  • 100:£2.8200
  • 10:£3.4300
  • 1:£4.2700
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Availability
Stock:
948
On Order:
2931
Enter Quantity:
Current price of SIHB22N60AEL-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.14
$4.14
10
$3.43
$34.30
100
$2.82
$282.00
250
$2.73
$682.50
500
$2.45
$1 225.00
1000
$2.07
$2 070.00
2500
$1.96
$4 900.00
5000
$1.89
$9 450.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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