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BGA2803,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2803 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 10 of 18
NXP Semiconductors
BGA2803
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
= 2.7 V 29 28 28 dBm
V
CC
=3.0V 29 28 28 dBm
V
CC
=3.3V 29 28 28 dBm
f = 950 MHz
V
CC
= 2.7 V 28 28 28 dBm
V
CC
=3.0V 28 28 28 dBm
V
CC
=3.3V 28 28 28 dBm
f = 2150 MHz
V
CC
= 2.7 V 29 29 30 dBm
V
CC
=3.0V 29 30 30 dBm
V
CC
=3.3V 29 30 31 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
= 2.7 V 7 7 8dBm
V
CC
=3.0V 5 6 6dBm
V
CC
=3.3V 4 5 5dBm
f = 950 MHz
V
CC
= 2.7 V 7 7 8dBm
V
CC
=3.0V 5 6 6dBm
V
CC
=3.3V 4 4 5dBm
f = 2150 MHz
V
CC
= 2.7 V 8 9 11 dBm
V
CC
=3.0V 6 8 10 dBm
V
CC
=3.3V 5 7 9dBm
BGA2803 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 11 of 18
NXP Semiconductors
BGA2803
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(sat)
saturated output power f = 250 MHz
V
CC
= 2.7 V 5 5 5dBm
V
CC
=3.0V 3 3 4dBm
V
CC
=3.3V 2 2 3dBm
f = 950 MHz
V
CC
= 2.7 V 4 5 5dBm
V
CC
=3.0V 3 3 4dBm
V
CC
=3.3V 2 2 3dBm
f = 2150 MHz
V
CC
= 2.7 V 5 7 9dBm
V
CC
=3.0V 4 6 7dBm
V
CC
=3.3V 3 5 7dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 39 dBm
V
CC
= 2.7 V 29 34 40 dBc
V
CC
=3.0V 32 35 39 dBc
V
CC
=3.3V 33 36 39 dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
= 39 dBm
V
CC
= 2.7 V 27 28 28 dBc
V
CC
=3.0V 29 29 28 dBc
V
CC
=3.3V 30 30 30 dBc
BGA2803 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 12 of 18
NXP Semiconductors
BGA2803
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IP3
O
output third-order intercept point f
1
=250MHz;
f
2
=251MHz;
P
drive
= 39 dBm
V
CC
=2.7 V 5 4 3 dBm
V
CC
=3.0V 7 6 5 dBm
V
CC
=3.3V 8 7 6 dBm
f
1
=950MHz;
f
2
=951MHz;
P
drive
= 39 dBm
V
CC
=2.7 V 4 3 3 dBm
V
CC
=3.0V 6 5 4 dBm
V
CC
=3.3V 8 7 5 dBm
f
1
=2150MHz;
f
2
=2151MHz;
P
drive
= 39 dBm
V
CC
=2.7 V 2 0 1dBm
V
CC
=3.0V 3 2 1dBm
V
CC
=3.3V 4 2 0 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
B
3dB
3 dB bandwidth V
CC
= 2.7 V 2.770 2.591 2.382 GHz
V
CC
= 3.0 V 2.837 2.651 2.446 GHz
V
CC
= 3.3 V 2.892 2.702 2.490 GHz
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BGA2803,115

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier MMIC wideband amp
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