OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MMBT2907ALT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
October, 2016 − Rev. 15
1 Publication Order Number:
MMBT2907ALT1/D
MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
Collector Current − Peak (Note 3) I
CM
−1200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation − FR−5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
556 °C/W
Total Device Dissipation − Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
417 °C/W
Total Device Dissipation − Heat Spreader
or equivalent, (Note 4) @T
A
= 25°C
P
D
350 mW
Thermal Resistance, Junction−to−Ambient
R
JA
357 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm
2
, 2 oz.
2F = Device Code
M = Date Code*
G = Pb−Free Package
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
MMBT2907ALT3G
SMMBT2907ALT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT2907ALT1G
SMMBT2907ALT1G
SOT−23
(Pb−Free)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 / Tape &
Reel
10,000 / Tape &
Reel
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
1
3
2F M G
G
MMBT2907AL, SMMBT2907AL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= −1.0 mAdc, I
B
= 0)
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60
−60
−
−
Vdc
Collector−Base Breakdown Voltage (I
C
= −10 Adc, I
E
= 0)
V
(BR)CBO
−60 − Vdc
Emitter−Base Breakdown Voltage (I
E
= −10 Adc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current (V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc) I
CEX
− −50 nAdc
Collector Cutoff Current
(V
CB
= −50 Vdc, I
E
= 0)
(V
CB
= −50 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
−0.010
−10
Adc
Base Cutoff Current (V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc) I
BL
− −50 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= −500 mAdc, V
CE
= −10 Vdc) (Note 5)
h
FE
75
100
100
100
50
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= −150 mAdc, I
B
= −15 mAdc) (Note 5)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 5)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Notes 5, 6),
(I
C
= −50 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
200 − MHz
Output Capacitance (V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
− 8.0
pF
Input Capacitance (V
EB
= −2.0 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
− 30
SWITCHING CHARACTERISTICS
Turn−On Time
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
I
B1
= −15 mAdc)
t
on
− 45
ns
Delay Time t
d
− 10
Rise Time t
r
− 40
Turn−Off Time
(V
CC
= −6.0 Vdc, I
C
= −150 mAd
c,
I
B1
= I
B2
= −15 mAdc)
(V
CC
= −6.0 Vdc, I
C
= −150 mAd
c,
I
B1
= I
B2
= −15 mAdc)
t
off
− 100
Storage Time t
s
− 80
Fall Time t
f
− 30
5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
6. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
MMBT2907AL, SMMBT2907AL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
100
1000
10
1.0
T
J
= 150°C
25°C
-55°C
h
FE
, DC CURRENT GAIN
10 100 1000
V
CE
= 10 V
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
I
C
= -1.0 mA
-0.005
-10 mA
-0.01
-100 mA
-500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0 -10 -20
-30
-50
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
I
C
, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
t
r
2.0 V
t
d
@ V
BE(off)
= 0 V
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
t
f
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
P1-P3P4-P6

MMBT2907ALT1G

Mfr. #:
Buy MMBT2907ALT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet