MMBT2907ALT1G

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4
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= -50 A
-100 A
-500 A
-1.0 mA
R
s
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
I
C
= -1.0 mA, R
s
= 430
-500 A, R
s
= 560
-50 A, R
s
= 2.7 k
-100 A, R
s
= 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
20
10
7.0
5.0
3.0
-0.2
-0.3
-0.5
-1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
C
eb
C
cb
V
CE
= -20 V
T
J
= 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.6
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
MMBT2907AL, SMMBT2907AL
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5
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Figure 13. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
V
CE
= 1 V
150°C
−55°C
25°C
Figure 14. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
R
VC
for V
CE(sat)
COEFFICIENT (mV/ ° C)
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
R
VB
for V
BE
Figure 15. Safe Operating Area
V
CE
(Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ T
A
= 25°C
100 ms
1 s
10 ms
1 ms
100 s 10 s
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.027
c
0 −−− 10 0 −−− 10
T
°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
SOLDERING FOOTPRINT
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X
0.95
RECOMMENDED
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MMBT2907ALT1/D
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MMBT2907ALT1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V PNP
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