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NTUD3169CZT5G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2008
May, 2017 − Rev. 1
1 Publication Order Number:
NTUD3169CZ/D
NTUD3169CZ
Small Signal MOSFET
20 V, 220 mA / −200 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
• Complementary MOSFET Device
• Offers a Low R
DS(on)
Solution in the Ultra Small 1.0x1.0 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• Load Switch with Level Shift
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±8 V
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
220
mA
T
A
= 85°C 160
t v 5 s
T
A
= 25°C 280
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C −200
T
A
= 85°C −140
t v 5 s
T
A
= 25°C −250
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
125
mW
t v 5 s
200
Pulsed Drain Current N−Channel
t
p
= 10 ms
I
DM
800
mA
P−Channel
−600
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
200 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
MARKING
DIAGRAM
www.onsemi.com
V
(BR)DSS
R
DS(on)
Max I
D
Max
N−Channel
20 V
5.0 W @ −4.5 V
6.0 W @ −2.5 V
−0.2 A
P−Channel
20 V
1.5 W @ 4.5 V
2.0 W @ 2.5 V
0.22 A
7.0 W @ −1.8 V
3.0 W @ 1.8 V
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
PINOUT: SOT−963
NTUD3169CZT5G SOT−963
(Pb−Free)
8000 /
Tape & Reel
2 = Specific Device Code
M = Date Code
10 W @ −1.5 V
4.5 W @ 1.5 V
SOT−963
CASE 527AD
2 M
1
NTUD3169CZ
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State, Minimum Pad (Note 3)
R
q
JA
1000
°C/W
Junction−to−Ambient – t v 5 s (Note 3) 600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol N/P Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 mA
20
V
P
I
D
= −250 mA
−20
Zero Gate Voltage Drain Current
I
DSS
N V
GS
= 0 V, V
DS
= 5.0 V
T
J
= 25°C 50
nA
T
J
= 85°C 200
P V
GS
= 0 V, V
DS
= −5.0 V
T
J
= 25°C −50
T
J
= 85°C −200
Zero Gate Voltage Drain Current
I
DSS
N V
GS
= 0 V, V
DS
= 16 V
T
J
= 25°C
100
nA
P V
GS
= 0 V, V
DS
= −16 V −100
Gate−to−Source Leakage Current
I
GSS
N
V
DS
= 0 V, V
GS
= ±5.0 V
±100
nA
P ±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
N
V
GS
= V
DS
I
D
= 250 mA
0.4 1.0
V
P
I
D
= −250 mA
−0.4 −1.0
Drain−to−Source On Resistance
R
DS(on)
N V
GS
= 4.5 V, I
D
= 100 mA 0.75 1.5
W
P V
GS
= −4.5V, I
D
= −100 mA 2.0 5.0
N V
GS
= 2.5 V, I
D
= 50 mA 1.0 2.0
P V
GS
= −2.5V, I
D
= −50 mA 2.6 6.0
N V
GS
= 1.8 V, I
D
= 20 mA 1.4 3.0
P V
GS
= −1.8V, I
D
= −20 mA 3.4 7.0
N V
GS
= 1.5 V, I
D
= 10 mA 1.8 4.5
P V
GS
= −1.5 V, I
D
= −10 mA 4.0 10
N V
GS
= 1.2 V, I
D
= 1.0 mA 2.8
P V
GS
= −1.2 V, I
D
= −1.0 mA 6.0
Forward Transconductance
g
FS
N V
DS
= 5.0 V, I
D
= 125 mA 0.48
S
P V
DS
= −5.0 V, I
D
= −125 mA 0.35
Source−Drain Diode Voltage V
SD
N V
GS
= 0 V, I
S
= 10 mA
T
J
= 25°C
0.6 1.0
V
P V
GS
= 0 V, I
S
= −10 mA −0.6 −1.0
CAPACITANCES
Input Capacitance
C
ISS
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 15 V
12.5
pF
Output Capacitance C
OSS
3.6
Reverse Transfer Capacitance C
RSS
2.6
Input Capacitance C
ISS
P
f = 1 MHz, V
GS
= 0 V
V
DS
= −15 V
13.5
Output Capacitance C
OSS
3.8
Reverse Transfer Capacitance C
RSS
2.0
4. Switching characteristics are independent of operating junction temperatures
NTUD3169CZ
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionN/PSymbol
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time t
d(ON)
N
V
GS
= 4.5 V, V
DD
= 10 V, I
D
= 200 mA,
R
G
= 2.0 W
16.5
ns
Rise Time t
r
25.5
Turn−Off Delay Time t
d(OFF)
142
Fall Time t
f
80
Turn−On Delay Time t
d(ON)
P
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −200 mA, R
G
= 2.0 W
26
Rise Time t
r
46
Turn−Off Delay Time t
d(OFF)
196
Fall Time t
f
145
4. Switching characteristics are independent of operating junction temperatures
P1-P3P4-P6P7-P8

NTUD3169CZT5G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V Mosfet Complementary
Lifecycle:
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