NTUD3169CZT5G

NTUD3169CZ
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4
TYPICAL CHARACTERISTICS (N−CHANNEL)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.1
0.2
0.3
0.4
3210
0
0.1
0.2
0.3
0.4
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
543210
0
1
2
3
4
0.350.30 0.400.250.200.150.100.05
0
0.25
0.50
0.75
1.00
1.25
1.50
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
201612840
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 2 thru 5 V
T
J
= 25°C
1.8 V
1.6 V
1.4 V
1.2 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
5 V
I
D
= 220 mA
T
J
= 25°C
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
I
D
= 100 mA
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
150
NTUD3169CZ
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5
TYPICAL CHARACTERISTICS (N−CHANNEL)
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V)
R
G
, GATE RESISTANCE (W)
20151050
0
2.50
5.00
7.50
10.0
12.5
15.0
20.0
100101
1
10
100
1000
Figure 9. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
10.80.60.40.20
0
0.025
0.050
0.075
0.100
0.125
0.175
0.200
C, CAPACITANCE (pF)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
17.5
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
DD
= 10 V
I
D
= 200 mA
V
GS
= 4.5 V
t
d(off)
t
d(on)
t
r
t
f
0.150
V
GS
= 0 V
T
J
= 25°C
NTUD3169CZ
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6
TYPICAL CHARACTERISTICS (P−CHANNEL)
Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.04
0.20
0.28
0.36
4210
0
0.04
0.16
0.28
0.36
Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current
and Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
54321
0
4
8
12
0.350.300.250.200.150.100.05
0
1
2
3
4
Figure 14. On−Resistance Variation with
Temperature
Figure 15. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
201612840
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 2.2 thru 5 V
T
J
= 25°C
1.8 V
1.6 V
1.4 V
1.2 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
5 V
I
D
= 200 mA
T
J
= 25°C
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
I
D
= 200 mA
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
150
0.08
0.12
0.16
0.24
0.32
2.0 V
3
0.08
0.12
0.20
0.24
0.32

NTUD3169CZT5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V Mosfet Complementary
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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