16
FN9107.3
June 30, 2005
Voltage Loop
The output CORE voltage feedback is applied to the Error
Amplifier through the compensation network. The signal
seen on the FB pin will drive the Error Amplifier output either
high or low, depending on the CORE voltage. A CORE
voltage level that is lower than the IMVP-IV™ and
IMVP-IV+™ reference, as output from the 6 bit DAC, makes
the amplifier output move towards a higher output voltage
level. The amplifier output voltage is applied to the positive
inputs of the comparators by the BALANCE summing
networks. Out-of-phase sawtooth signals are applied to the
two comparator inverting inputs. Increasing Error Amplifier
voltage results in increased Comparator output duty cycle.
This increased duty cycle signal is passed through the PWM
circuit to the internal gate-drive circuitry. The output of the
internal gate-drive is directly connected to the gate of the
MOSFETs. Increased duty cycle or ON-time for the high side
MOSFET transistors results in increased output voltage,
VCORE, to compensate for the low output voltage sensed.
Current Loop
The current control loop keeps the channel currents in
balance. During the PWM off-time of each channel, the
voltage Vr
DS(ON)
, developed across the lower MOSFET is
sampled. Internally, the ISEN pin is held at virtual ground
during this interval, and Vr
DS(ON)
is impressed across the
R
ISEN
resistor. This provides current feedback proportional
to the output current of each channel. The scaled output
currents from all active channels are combined to create an
average current reference I
AVERAGE
, proportional to the
converter total output current. This signal is then subtracted
from the individual channel scaled output currents to
produce a current correction signal for each channel. The
current correction signal keeps each channel output current
contribution balanced relative to the other active channels.
Each current correction signal is subtracted from the error
amplifier output and fed to the individual channel PWM
circuits. For example, assume the voltage sampled across
Q4 in Figure 9 is higher than that sampled across Q2. The
ISEN2 current would be higher than ISEN1. When the two
reference currents are averaged, they accurately represent
the total output current of the converter. The reference
current I
AVERAGE
is then subtracted from the ISEN
currents. This results in a positive offset for Channel 2 and a
negative offset for Channel 1. These offsets are subtracted
from the error amplifier signal and perform phase balance
correction. The V
ERROR2
signal is reduced, while
V
ERROR1
would be increased. The PWM circuit would then
reduce the pulse width to lower the output current
contribution by Channel 2, while doing the opposite to
Channel 1, thereby balancing channel currents.
Droop Compensation
Microprocessors and other peripherals tend to change their
load current demands from near no-load to full load often
during operation. These same devices require minimal
output voltage deviation during a load step.
A high di/dt load step will cause an output voltage spike. The
amplitude of the spike is dictated by the output capacitor
ESR, multiplied by the load step magnitude, plus the output
capacitor ESL, times the load step di/dt. A positive load step
produces a negative output voltage spike and vice versa. A
large number of low-series-impedance capacitors are often
used to prevent the output voltage deviation from exceeding
the tolerance of some devices. One widely accepted solution
to this problem is output voltage “Droop”, or active voltage
positioning.
As shown in Figure 3 and Figure 9, the average channel
current is used to control the “Droop” current source,
I
DROOP
. The “Droop” current source is a controlled current
source and is proportional to output current. This current
source is approximately 87% of the averaged ISEN currents.
The Droop current is sourced out of the SOFT pin through
the Droop resistor and returns through the EA+ pin. This
creates a “Droop” voltage V
DROOP
, which subtracts from
the IMVP- IV™ and IMVP-IV+™ reference voltage on SOFT
to generate the voltage set point for the CORE regulator.
Full load current for the Intel IMVP-IV™ and IMVP-IV+™
specification is 32A. Knowing that the Droop Current,
sourced out of the SOFT pin, will be 87% of the ISEN
averaged currents, a “Droop” resistor R
DROOP
, can be
selected to provide the amount of voltage “Droop” required
at full load. The selection of this resistor is explained in the
following section.
Selection of RDROOP
Figure 11 shows a static “Droop” load line for the 1.484V
Active Mode. The ISL6217A, as previously mentioned,
allows the programming of the load line slope by the
selection of the RDROOP resistor.
As per the Intel IMVP-IV™ and IMVP-IV+™ specification,
Droop = 0.003 (). Therefore, 25A of full load current
equates to a 0.075V Droop output voltage from the VID
setpoint. Refer to Figure 3 and Figure 9, R
DROOP
can be
V
OUT,HI
V
OUT,LO
I
OUT,MAX
I
OUT,NL
V
OUT,NOM
I
OUT,MID
-3 m
_
load line
(25A,1.409V
)
(0A,1.506V)
(0A,1.484V)
(25A,1.431V
)
(0A,1.462V)
(25A,1.387V
)
STATIC TOLERANCE BANDS
NOMINAL "DROOP" LOAD LINE
FIGURE 11. IMVP-IV ACTIVE MODE STATIC LOAD LINE
ISL6217A
17
FN9107.3
June 30, 2005
selected based on R
ISEN
which is calculated through
Equation 3, r
DS(ON)
, and Droop as per the Block Diagram or
the following equation:
Diode Emulation
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active, the
ISL6217A will detect the zero current crossing of the output
inductor and turn off LGATE. This ensures that
discontinuous conduction mode (DCM) is achieved. In DCM,
conduction losses are reduced in the Low-Side MOSFET,
consequently boosting efficiency. The ISL6217A operates in
DCM in both deep and deeper sleep mode.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
Component Selection Guidelines
OUTPUT CAPACITOR SELECTION
Output capacitors are required to filter the output inductor
current ripple and supply the transient load current. The
filtering requirements are a function of the channel switching
frequency and the output ripple current. The load transient
requirements are a function of the slew rate (di/dt) and the
magnitude of the transient load current.
The microprocessor used for IMVP-IV™ and IMVP-IV+™
will produce transient load rates as high as 30A/ns. High
frequency, ceramic capacitors are used to supply the initial
transient current and slow the rate-of-change seen by the
bulk capacitors. Bulk filter capacitor values are generally
determined by the ESR (Effective Series Resistance) and
voltage rating requirements rather than actual capacitance
requirements. To meet the stringent requirements of
IMVP-IV™ and IMVP-IV+™, (15) 2.2µF, 0612 “Flip Chip”
high frequency, ceramic capacitors are placed very close the
Processor power pins, with care being taken not to add
inductance in the circuit board traces that could cancel the
usefulness of these low inductance components.
Specialized low-ESR capacitors, intended for switching
regulator applications, are recommended for the bulk
capacitors. The bulk capacitor ESR and ESL determine the
output ripple voltage and the initial voltage drop following a
high slew-rate transient edge. Recommended are at least (4)
4V, 220µF Sanyo Sp-Cap capacitors in parallel, or (5) 330µF
SP-Cap style capacitors. These capacitors provide an
equivalent ESR of less than 3m. These components
should be laid out very close to the load.
As the sense trace for VSEN may be long and routed close
to switching nodes, a 1.0µF ceramic decoupling capacitor is
located between VSEN and ground at the ISL6217A.
Output Inductor Selection
The output inductor is selected to meet the voltage ripple
requirements and minimize the converter response time to a
load transient. In a multi-phase converter topology, the ripple
current of one active channel partially cancels with the other
active channels to reduce the overall ripple current. The
reduction in total output ripple current results in a lower
overall output voltage ripple.
The inductor selected for the power channels determines the
channel ripple current. Increasing the value of inductance
reduces the total output ripple current and total output
voltage ripple; however, increasing the inductance value will
slow the converter response time to a load transient.
One of the parameters limiting the converter response time
to a load transient is the time required to slew the inductor
current from its initial current level to the transient current
level. During this interval, the difference between the two
levels must be supplied by the output capacitance.
Minimizing the response time can minimize the output
capacitance required.
The channel ripple can be reasonably approximated by the
following equation:
The total output ripple current can be approximated from the
curves in Figure 10.
They provide the total ripple current as a function of duty
cycle and number of active channels, normalized to the
parameter K
NORM
at zero duty cycle,
Where L is the channel inductor value.
()
)(
M
r
R
Droop3.2R
)DSON(
ISEN
DROOP
=
(EQ. 6)
IN
OUT
SW
OUTIN
CH
V
V
LF
VV
I
=
(EQ. 7)
SW
OUT
NORM
FL
V
K
=
(EQ. 8)
ISL6217A
18
FN9107.3
June 30, 2005
FIGURE 12. OUTPUT RIPPLE CURRENT MULTIPLIER vs
DUTY CYCLE
Find the intersection of the active channel curve and duty
cycle for your particular application. The resulting ripple
current multiplier from the y-axis is then multiplied by the
normalization factor K
NORM
, to determine the total output
ripple current for the given application. Find the intersection
of the active channel curve and duty cycle for your particular
application. The resulting ripple current multiplier from the y-
axis is then multiplied by the normalization factor K
NORM
, to
determine the total output ripple current for the given
application.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use ceramic capacitors for
the high frequency decoupling, and bulk capacitors to supply
the RMS current. Small ceramic capacitors must be placed
very close to the upper MOSFET to suppress the voltage
induced in the parasitic circuit impedances.
Two important parameters to consider when selecting the
bulk input capacitor are the voltage rating and the RMS
current rating. For reliable operation, select a bulk capacitor
with voltage, and current ratings above the maximum input
voltage and the largest RMS current required by the circuit.
The capacitor voltage rating should be at least 1.25 times
greater than the maximum input voltage and a voltage rating
of 1.5 times is a conservative guideline. The RMS current
requirement for a converter design can be approximated
with the aid of Figure 13.
Follow the curve for the number of active channels in the
converter design. Next determine the worst case duty cycle
for the converter and find the intersection of this value and
the active channel curve. The worst case duty cycle is
defined as the maximum operating CORE output voltage
divided by the minimum operating battery voltage. Find the
corresponding y-axis value, which is the current multiplier.
Multiply the total full load output current, not the channel
value, by the current multiplier value found, and the result is
the RMS input current which must be supported by the input
capacitors.
FIGURE 13. INPUT RMS RIPPLE CURRENT MULTIPLIER
MOSFET Selection and Considerations
For the Intel IMVP-IV™ and IMVP-IV+™ application, which
requires up to 25A of current, it is suggested that 2 channel
operation with (3) MOSFETs per channel be implemented.
This configuration would be: (1) High Switching Frequency,
Low Gate Charge MOSFET for the Upper, and (2) Low
r
DS(ON)
MOSFETs for the Lowers.
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components: conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty cycle of the converter. Refer to
the PUPPER and PLOWER equations below. The
conduction losses are the main component of power
dissipation for the lower MOSFETs. Only the upper
MOSFETs have significant switching losses, since the lower
devices turn on and off into near zero voltage. The following
equations assume linear voltage-current transitions and do
not model power loss due to the reverse-recovery of the
lower MOSFETs body diode. The gate-charge losses are
dissipated in the ISL6217A drivers and do not heat the
MOSFETs; however, large gate-charge increases the
switching time t
SW,
which increases the upper MOSFET
switching losses. Ensure that both MOSFETs are within their
maximum junction temperature, at high ambient
temperature, by calculating the temperature rise according
to package thermal-resistance specifications.
CMNORMTOTAL
KKI =
(EQ. 9)
()
()
IN
OUTINONDS
2
O
LOWER
V
VVrI
P
××
=
(EQ. 10)
ISL6217A

ISL6217ACVZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Switching Controllers P6 PWM CNTRLR FOR IMVP4 W/DIODE EMULAT
Lifecycle:
New from this manufacturer.
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