PSMN035-150B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 November 2009 3 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-source volt
Fig 3. Normalized total power dissipation as a
function of mounting base temperature
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration
T
mb
(°C)
0 20015050 100
40
80
120
I
der
(%)
0
110
10
2
10
3
V
DS
(V)
1
10
10
2
10
3
I
D
(A)
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
t
p
t
p
T
P
t
T
d =
D.C.
100 ms
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
10
−3
10
−2
10
−1
110
t
p
(ms)
1
10
10
2
I
AS
(A)
T
j
prior to avalanche = 150 °C
25 °C
003aaa017
