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PSMN035-150B,118

P1-P3P4-P6P7-P9P10-P12P13-P13
PSMN035-150B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 November 2009 6 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
003aaa019
V
DS
(V)
0 0.4 0.8 1.2 1.6 2
I
D
(A)
0
10
20
30
40
50
8 V
5.4 V
5.2 V
5 V
4.8 V
4.6 V
4.4 V
V
GS
= 10 V
6 V
V
GS
(V)
I
D
(A)
0
10
20
30
40
50
V
DS
> I
D
× R
DSon
175 °C
T
j
= 25 °C
1042680
003aaa020
003aaa024
1
2
3
4
5
max
typ
min
I
D
(A)
V
GS
(V)
10
−7
10
−6
10
−5
10
−4
10
−3
10
−2
g
fs
(S)
I
D
(A)
2010 30 40 500
0
20
30
40
50
10
T
j
= 25 °C
T
j
= 175 °C
003aaa025
PSMN035-150B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 November 2009 7 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
2.5
−60 −20 20
1
0.5
0
1.5
2
60 100 140 180
3.5
V
GS(th)
(V)
T
j
(°C)
3
4
4.5
max
typ
min
003aaa023
R
DSon
(Ω)
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0 5 10 15 20
I
D
(A)
25 30
003aaa021
5.4 V
6.0 V
4.4 V
4.8 V
5.0 V
5.2 V
V
GS
= 8 V
4.6 V
a
T
j
(°C)
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
40
0
−40
80
120
160
003aaa022
1.0
0.8
0.6
3.0
003aaa028
0
2
4
6
8
10
0
20 40 60 80
Q
G
(nC)
V
GS
(V)
V
DD
= 30 V
V
DD
= 120 V
I
D
= 50 A
T
j
= 25 °C
PSMN035-150B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 November 2009 8 of 12
NXP Semiconductors
PSMN035-150B
N-channel TrenchMOS SiliconMAX standard level FET
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain
voltage; typical values
003aaa026
Crss
Coss
Ciss
110
10
2
10
−1
10
3
10
2
10
4
Crss
Coss,
Ciss,
(pF)
V
DS
(V)
003aaa027
1.0 1.2
I
S
(A)
0.80.60.2 0.40
V
SD
(V)
T
j
= 175 °C
T
j
= 25 °C
10
0
5
15
20
25
30
35
45
40
50
P1-P3P4-P6P7-P9P10-P12P13-P13

PSMN035-150B,118

Mfr. #:
Buy PSMN035-150B,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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