MC100EPT22DG

© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 14
1 Publication Order Number:
MC100EPT22/D
MC100EPT22
3.3V Dual LVTTL/LVCMOS
to Differential LVPECL
Translator
Description
The MC100EPT22 is a dual LVTTL/LVCMOS to differential
LVPECL translator. Because LVPECL (Positive ECL) levels are used
only +3.3 V and ground are required. The small outline 8lead
package and the single gate of the EPT22 makes it ideal for those
applications where space, performance, and low power are at a
premium. Because the mature MOSAIC 5 process is used, low cost
and high speed can be added to the list of features.
Features
420 ps Typical Propagation Delay
Maximum Frequency = > 1.1 GHz Typical
Operating Range: V
CC
= 3.0 V to 3.6 V with GND = 0 V
PNP LVTTL Inputs for Minimal Loading
Q Output Will Default HIGH with Inputs Open
The 100 Series Contains Temperature Compensation.
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
M = Date Code
G = Pb-Free Package
SOIC8 NB
D SUFFIX
CASE 75107
MARKING DIAGRAMS*
TSSOP8
DT SUFFIX
CASE 948R02
ALYWG
G
KA22
1
8
1
8
www.onsemi.com
*For additional marking information, refer to
Application Note AND8002/D
.
1
8
KPT22
ALYW
G
1
8
DFN8
MN SUFFIX
CASE 506AA
3S MG
G
14
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MC100EPT22DG SOIC8 NB
(Pb-Free)
98 Units/Tube
MC100EPT22DR2G
2500 Tape & Reel
TSSOP8
(Pb-Free)
MC100RPT22DTR2G 2500 Tape & Reel
MC100EPT22DTG 100 Tape & Reel
DFN8
(Pb-Free)
MC100EPT22MNR4G 1000 Tape & Reel
For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
.
SOIC8 NB TSSOP8 DFN8
SOIC8 NB
(Pb-Free)
TSSOP8
(Pb-Free)
MC100EPT22
www.onsemi.com
2
1
2
3
45
6
7
8
D0
GND
V
CC
Figure 1. 8Lead Pinout (Top View) and Logic Diagram
Q0
D1Q1
Q1
Q0
LVPECL LVTTL
Table 1. PIN DESCRIPTION
PIN
Q0, Q1, Q0, Q1
D0, D1 LVTTL Inputs
FUNCTION
LVPECL Differential Outputs
V
CC
Positive Supply
GND Ground
EP (DFN8 only) Thermal exposed pad
must be connected to a sufficient ther-
mal conduit. Electrically connect to the
most negative supply (GND) or leave
unconnected, floating open.
Table 2. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor N/A
Internal Input Pullup Resistor N/A
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 4 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb-Free Pkg
SOIC8 NB
TSSOP8
DFN8
Level 1
Level 3
Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
Transistor Count 164 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
MC100EPT22
www.onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Power Supply GND = 0 V 6 V
V
I
Input Voltage GND = 0 V V
I
V
CC
6 to 0 V
I
out
Output Current Continuous
Surge
50
100
mA
T
A
Operating Temperature Range 40 to +85 °C
T
stg
Storage Temperature Range 65 to +150 °C
q
JA
Thermal Resistance (Junction-to-Ambient) 0 lfpm
500 lfpm
SOIC8 NB
SOIC8 NB
190
130
°C/W
q
JC
Thermal Resistance (Junction-to-Case) Standard Board SOIC8 NB 41 to 44 °C/W
q
JA
Thermal Resistance (Junction-to-Ambient) 0 lfpm
500 lfpm
TSSOP8
TSSOP8
185
140
°C/W
q
JC
Thermal Resistance (Junction-to-Case) Standard Board TSSOP8 41 to 44 °C/W
q
JA
Thermal Resistance (Junction-to-Ambient) 0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
T
sol
Wave Solder (Pb-Free) 265 °C
q
JC
Thermal Resistance (Junction-to-Case) (Note 1) DFN8 35 to 40 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. JEDEC standard multilayer board 2S2P (2 signal, 2 power)
Table 4. TTL INPUT DC CHARACTERISTICS (V
CC
= 3.3 V, GND = 0 V, T
A
= 40°C to 85°C)
Symbol
Characteristic Condition Min Typ Max Unit
I
IH
Input HIGH Current V
IN
= 2.7 V 20
mA
I
IHH
Input HIGH Current MAX V
IN
= V
CC
100
mA
I
IL
Input LOW Current V
IN
= 0.5 V 0.6 mA
V
IK
Input Clamp Voltage I
IN
= 18 mA 1.0 V
V
IH
Input HIGH Voltage 2.0 V
V
IL
Input LOW Voltage 0.8 V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. PECL OUTPUT DC CHARACTERISTICS (V
CC
= 3.3 V, GND = 0.0 V (Note 1))
Symbol
Characteristic
40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
CC
Power Supply Current 32 43 55 35 45 60 37 46 62 mA
V
OH
Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV
V
OL
Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Output parameters vary 1:1 with V
CC
.
2. All loading with 50 W to V
CC
2.0 V.

MC100EPT22DG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels 3.3V LVTTL/LVCMOS to Diff LVPECL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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