1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ±25 V
I
D
(1)
Drain current (continuous) at T
case
= 25 °C 34
A
Drain current (continuous) at T
case
= 100 °C 21
I
DM
Drain current (pulsed) 136 A
P
TOT
Total dissipation at T
case
= 25 °C 40 W
dv/dt
Peak diode recovery voltage slope 50
V/ns
dv/dt
MOSFET dv/dt ruggedness 50
V
ISO
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 s; T
C
= 25 °C)
2500 V
T
stg
Storage temperature
-55 to 150 °C
T
j
Operating junction temperature
Notes:
(1)
limited by maximum junction temperature.
(2)
Pulse width is limited by safe operating area.
(3)
I
SD
≤ 34 A, di/dt=900 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 400 V.
(4)
V
DS
≤ 480 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 0.32
°C/W
R
thj-amb
Thermal resistance junction-ambient 62.5
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive 6 A
E
AS
(1)
Single pulse avalanche energy 800 mJ
Notes:
(1)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
