Electrical characteristics
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA 600
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 600 V
1
µA
V
GS
= 0 V, V
DS
= 600 V,
T
case
= 125 °C
100
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±25 V
±5 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4 5 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 17 A
0.085 0.093 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 2500 -
pF
C
oss
Output capacitance - 120 -
C
rss
Reverse transfer
capacitance
- 3 -
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V - 200 - pF
R
G
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A - 4 - Ω
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 34 A,
V
GS
= 10 V (see Figure 15:
"Gate charge test circuit")
- 56 -
nC
Q
gs
Gate-source charge - 13 -
Q
gd
Gate-drain charge - 30 -
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 300 V, I
D
= 25 A
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 14: "Switching
times test circuit for
resistive load" and Figure
19: "Switching time
waveform")
- 29 -
ns
t
r
Rise time - 27 -
t
d(off)
Turn-off delay time - 85 -
t
f
Fall time - 6 -
