R10DS0051EJ0100 Rev.1.00 Page 1 of
14
2011.03.30
R1LV0216BSB
2Mb Advanced LPSRAM (128k word x 16bit)
Description
The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,
higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a
simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has
been packaged in 44-pin TSOP.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 1µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS#, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
Ordering Information
Orderable Part Name
Access
time
Temperature
Range
Package
Shipping
Container
Quantity
R1LV0216BSB-5SR#B0 0 ~ +70°C
R1LV0216BSB-5SI#B0
55 ns
-40 ~ +85°C
R1LV0216BSB-7SR#B0 0 ~ +70°C
R1LV0216BSB-7SI#B0
70 ns
-40 ~ +85°C
Tray
Max. 135pcs/Tray
Max. 1080pcs/Inner Box
R1LV0216BSB-5SR#S0 0 ~ +70°C
R1LV0216BSB-5SI#S0
55 ns
-40 ~ +85°C
R1LV0216BSB-7SR#S0 0 ~ +70°C
R1LV0216BSB-7SI#S0
70 ns
-40 ~ +85°C
400-mil 44pin plastic
TSOP (II)
(normal-bend type)
PTSB0044GD-B
(44P3F-B)
Embossed
tape
1000pcs/Reel
R10DS0051EJ0100
Rev.1.00
2011.03.30
