IXFN82N60Q3 Datasheet IXFN82N60Q3 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 600 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C 66 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

240 A

I

A

T

C

= 25°C82A

E

AS

T

C

= 25°C4J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 50 V/ns

P

D

T

C

= 25°C 960 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

V

ISOL

50/60 Hz, RMS, t = 1minute 2500 V~

I

ISOL

≤ 1mA, t = 1s 3000 V~

M

d

Mounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 3.5 6.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 μA

T

J

= 125°C 3 mA

R

DS(on)

V

GS

= 10V, I

D

= 41A, Note 1 75 mΩ

HiperFET

TM

Power MOSFET

Q3-Class

IXFN82N60Q3

V

DSS

= 600V

I

D25

= 66A

R

DS(on)

≤≤

≤ 75m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

DS100340(05/11)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Features

z

International Standard Package

z

Low Intrinsic Gate Resistance

z

miniBLOC with Aluminum Nitride

Isolation

z

Low Package Inductance

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

and Q

G

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

Temperature and Lighting Controls

Advance Technical Information

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

IXFN82N60Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 41A, Note 1 33 55 S

C

iss

13.5 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1450 pF

C

rss

120 pF

R

Gi

Gate Input Resistance 0.12 Ω

t

d(on)

40 ns

t

r

13 ns

t

d(off)

60 ns

t

f

14 ns

Q

g(on)

275 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 41A 88 nC

Q

gd

120 nC

R

thJC

0.13 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 82 A

I

SM

Repetitive, Pulse Width Limited by T

JM

330 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

1.9 μC

I

RM

15.4

A

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 41A

R

G

= 1Ω (External)

I

F

= 41A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

IXFN82N60Q3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8

V

7

V

6

V

5

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7

V

8

V

6

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

0 2 4 6 8 10121416

V

DS

- Volts

I

D

- Amperes

6

V

7V

5V

V

GS

= 10V

8V

4V

Fig. 4. R

DS(on)

Normalized to I

D

= 41A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 82A

I

D

= 41A

Fig. 5. R

DS(on)

Normalized to I

D

= 41A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFN82N60Q3

IXFN82N60Q3

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