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IXFN82N60Q3

P1-P3P4-P5
IXFN82N60Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
280
320
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 41A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
R
DS(on)
Limit
250µs
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_82N60Q3(Q9) 5-19-11
IXFN82N60Q3
Fig. 13. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P5

IXFN82N60Q3

Mfr. #:
Buy IXFN82N60Q3
Manufacturer:
Littelfuse
Description:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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