NDD60N550U1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V, I
D
=1mA 600 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
540 mV/°C
Drain−to−Source Leakage Current I
DSS
V
DS
= 600 V, V
GS
=0V
T
J
=25°C 1 mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
GS
= ±25 V ±100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250 mA
2 3.2 4 V
Negative Threshold Temperature Co-
efficient
V
GS(TH)
/T
J
Reference to 25°C, I
D
= 250 mA
7.6 mV/°C
Static Drain-to-Source On Resistance R
DS(on)
V
GS
=10V, I
D
=4A 510 550
mW
Forward Transconductance g
FS
V
DS
=15V, I
D
=4A 7.0 S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
V
DS
=50V, V
GS
= 0 V, f = 1 MHz
540
pF
Output Capacitance C
oss
33
Reverse Transfer Capacitance C
rss
1.6
Effective output capacitance, energy
related (Note 6)
C
o(er)
V
GS
= 0 V, V
DS
= 0 to 480 V
24
Effective output capacitance, time
related (Note 7)
C
o(tr)
I
D
= constant, V
GS
= 0 V,
V
DS
= 0 to 480 V
84
Total Gate Charge Q
g
V
DS
= 300 V, I
D
= 9.5 A, V
GS
=10V
18
nC
Gate-to-Source Charge Q
gs
3.4
Gate-to-Drain Charge Q
gd
8.7
Plateau Voltage V
GP
5.4 V
Gate Resistance R
g
5.5
W
RESISTIVE SWITCHING CHARACTERISTICS (Note 5)
Turn-on Delay Time
t
d(on)
V
DD
= 300 V, I
D
= 9.5 A,
V
GS
=10V, R
G
= 0 W
8
ns
Rise Time t
r
14
Turn-off Delay Time t
d(off)
20
Fall Time t
f
17
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
= 8.2 A, V
GS
=0V
T
J
=25°C 0.9 1.3
V
T
J
= 100°C 0.82
Reverse Recovery Time t
rr
V
GS
=0V, V
DD
=30V
I
S
= 9.5 A, d
i
/d
t
= 100 A/ms
290
ns
Charge Time t
a
160
Discharge Time t
b
130
Reverse Recovery Charge Q
rr
2.6
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
7. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
