NDD60N550U1
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.65
0.70
0.80
0.85
0.90
1.00
1.10
1.15
6005004003002001000
10
100
1000
10,000
Figure 9. Capacitance Variation Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
10001001010.1
1
10
100
1000
10,000
1210 2086420
0
2
4
6
8
10
12
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
101
1
10
100
1000
1.10.90.60.4
0.1
1
10
100
V
GS(th)
, NORMALIZED THRESHOLD VOLTAGE
I
DSS
, LEAKAGE (nA)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
= 250 mA
150
0.75
0.95
1.05
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
OSS
C
ISS
C
RSS
V
DS
= 300 V
T
J
= 25°C
I
D
= 9.5 A
0
50
100
150
200
250
300
350
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
T
Q
GS
Q
GD
V
DS
V
GS
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
T
J
= 25°C
t
d(on)
t
d(off)
t
r
t
f
100
181614
1
3
5
7
9
11
V
GS
= 10 V
V
DD
= 300 V
I
D
= 9.5 A
T
J
= −55°C
0.5 0.7 0.8 1.0
