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PHP18NQ11T,127

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PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 3 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area: continuous and peak currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
10
−1
1
10
10
2
1
10 10
2
10
3
t
p
= 10 μs
003aaa591
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
V
DS
(V)
1 ms
10 ms
100 ms
100 μs
DC
PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 4 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 --1.9K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air - 60 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaa592
10
−2
10
−1
1
10
Z
th(j-mb)
(K/W)
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
single pulse
0.2
δ = 0.5
0.1
0.05
0.02
t
p
t
p
T
P
t
T
δ =
PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 5 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=-55°C 98 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 110 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C;
see Figure 8
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 8
234V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 8
--4.4V
I
DSS
drain leakage current V
DS
=110V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=110V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=10V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=-10V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=9A; T
j
=175°C;
see Figure 9 and 10
--243mΩ
V
GS
=10V; I
D
=9A; T
j
=25°C;
see Figure 9
and 10
-8090mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=18A; V
DS
=80V; V
GS
=10V;
T
j
=25°C; see Figure 11
-21-nC
Q
GS
gate-source charge - 4 - nC
Q
GD
gate-drain charge - 8 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 12
- 633 - pF
C
oss
output capacitance - 103 - pF
C
rss
reverse transfer
capacitance
-61-pF
t
d(on)
turn-on delay time V
DS
=50V; R
L
=2.7Ω; V
GS
=10V;
R
G(ext)
=5.6Ω; T
j
=25°C; I
D
=18.5A
-6-ns
t
r
rise time - 36 - ns
t
d(off)
turn-off delay time - 18 - ns
t
f
fall time - 12 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=18A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.92 1.2 V
t
rr
reverse recovery time I
S
=18A; dI
S
/dt = 100 A/µs; V
GS
=0V;
V
DS
=25V; T
j
=25°C
-55-ns
Q
r
recovered charge - 135 - nC
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PHP18NQ11T,127

Mfr. #:
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Manufacturer:
Nexperia
Description:
MOSFET TRENCH-100
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