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PHP18NQ11T,127

P1-P3P4-P6P7-P9P10-P12P13-P14
PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 6 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
003aaa593
0
5
10
15
20
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
4.6 V
V
GS
= 10 V
4.8 V
5 V
5.2 V
5.4 V
6 V
V
GS
(V)
08624
003aaa595
10
5
15
20
I
D
(A)
0
T
j
= 175 °C T
j
= 25 °C
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 7 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03am64
0
0.05
0.1
0.15
0.2
04812
I
D
(A)
R
DSon
(
Ω
)
10
T
j
= 25
°
C
6
5.2 5.454.8
V
GS
(V) =
03aa29
0
1
2
3
-60 0 60 120 180
T
j
(
°
C)
a
003aaa597
0
2
4
6
8
10
0102030
Q
G
(nC)
V
GS
(V)
20 V
V
DD
= 80 V
03am67
10
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
PHP18NQ11T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 10 March 2010 8 of 13
NXP Semiconductors
PHP18NQ11T
N-channel TrenchMOS standard level FET
Fig 13. Source current as a function of source-drain voltage; typical values
003aaa596
0
5
10
15
20
0 0.3 0.6 0.9 1.2
V
SD
(V)
I
S
(A)
25 °C
T
j
= 175 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

PHP18NQ11T,127

Mfr. #:
Buy PHP18NQ11T,127
Manufacturer:
Nexperia
Description:
MOSFET TRENCH-100
Lifecycle:
New from this manufacturer.
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