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SUP85N03-04P-E3

P1-P3P4-P6
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D TO-263 (D
2
PAK) 100% R
g
Tested
SUP/SUB85N03-04P
Vishay Siliconix
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
1
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(W) I
D
(A)
a
30
0.0043 @ V
GS
= 10 V 85
a
30
0.007 @ V
GS
= 4.5 V 85
a
D
G
S
N-Channel MOSFET
TO-220AB
Top View
GDS
DRAIN connected to TAB
TO-263
(D
2
PAK)
SDG
Top View
SUP85N03-04P
SUB85N03-04P
Ordering Information: SUP85N03-04P (TO-220AB)
SUB85N03-04P (TO-263, D
2
PAK)
SUB85N03-04P—E3 (TO-263, D
2
PAK, Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
=
175
_
C)
T
C
= 25_C
I
D
85
a
C
on
ti
nuous
D
ra
i
n
C
urren
t (T
J
=
175_C)
T
C
= 100_C
I
D
85
a
A
Pulsed Drain Current I
DM
240
A
Avalanche Current I
AR
75
Repetitive Avalanche Energy
b
L = 0.1 mH E
AR
280 mJ
Maximum Power Dissipation
b
T
C
= 25_C (TO-220AB and TO-263)
P
D
166
c
W
Maximum Power Dissipation
b
T
A
= 25_C (TO-263)
d
P
D
3.75
W
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
JtitAbit
PCB Mount (TO-263)
d
R
40
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
_C/W
Junction-to-Case R
thJC
0.9
C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
SUP/SUB85N03-04P
Vishay Siliconix
www.vishay.com
2
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA 30
V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1 2 3
V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
V
DS
= 30 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C 50
mA
g
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C 250
m
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V 120 A
V
GS
= 10 V, I
D
= 30 A 0.0035 0.0043
Drain Source On State Resistance
a
r
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C 0.0065
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C 0.008
W
V
GS
= 4.5 V, I
D
= 20 A
0.0055 0.007
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A 30 S
Dynamic
b
Input Capacitance C
iss
4500
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1380 pF
Reverse Transfer Capacitance C
rss
615
Gate Resistance
d
R
g
0.7 3.8 W
Total Gate Charge
b
Q
g
71 90
Gate-Source Charge
b
Q
gs
V
DS
= 15 V, V
GS
= 10 V, I
D
= 85 A
15
nC
Gate-Drain Charge
b
Q
gd
16
Turn-On Delay Time
b
t
d(on)
15 23
Rise Time
b
t
r
V
DD
= 15 V, R
L
= 0.18 W
12 18
ns
Turn-Off Delay Time
b
t
d(off)
,
.
I
D
^ 85 A, V
GEN
= 10 V, R
g
= 2.5 W
50 75
ns
Fall Time
b
t
f
22 35
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current I
S
85
A
Pulsed Current I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.1 1.5 V
Reverse Recovery Time t
rr
42 70 ns
Peak Reverse Recovery Current I
RM
I
F
= 85 A, di/dt = 100 A/ms
1.4 2.1 A
Reverse Recovery Charge Q
rr
0.03 0.06 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
d. TO-263 (D
2
PAK) only.
SUP/SUB85N03-04P
Vishay Siliconix
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1000
2000
3000
4000
5000
6000
7000
0 6 12 18 24 30
0
4
8
12
16
20
0 20 40 60 80 100 120 140
0
30
60
90
120
150
180
0 20406080100
0.000
0.002
0.004
0.006
0.008
0 20 40 60 80 100 120
0
50
100
150
200
250
0123456
0
50
100
150
200
250
0246810
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
V
DS
− Drain-to-Source Voltage (V) V
GS
− Gate-to-Source Voltage (V)
− Drain Current (A)I
D
− Gate-to-Source Voltage (V)
Q
g
− Total Gate Charge (nC)
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
C − Capacitance (pF)
V
GS
− Transconductance (S)g
fs
25_C
−55_C
2, 3 V
T
C
= 125_C
V
DS
= 15 V
I
D
= 85 A
V
GS
= 10 thru 6 V
V
GS
= 10 V
C
iss
C
oss
T
C
= −55_C
25_C
125_C
4 V
V
GS
= 4.5 V
− On-Resistance (r
DS(on)
W )
− Drain Current (A)I
D
I
D
− Drain Current (A)
5 V
C
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P1-P3P4-P6

SUP85N03-04P-E3

Mfr. #:
Buy SUP85N03-04P-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3
Lifecycle:
New from this manufacturer.
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