SUP85N03-04P-E3

SUP/SUB85N03-04P
Vishay Siliconix
www.vishay.com
4
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
(Normalized)
On-Resistance r
DS(on)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.4
0.8
1.2
1.6
2.0
50 25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
T
J
Junction Temperature (_C) V
SD
Source-to-Drain Voltage (V)
Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
V
GS
= 10 V
I
D
= 30 A
T
J
= 25_C
T
J
= 150_C
0
25
30
35
40
45
50 25 0 25 50 75 100 125 150 175
T
J
Junction Temperature (_C)t
in
(Sec)
1000
10
0.00001 0.001 0.1 1
0.1
(a)I
Dav
0.01
I
AV
(A) @ T
A
= 150_C
(V)V
(BR)DSS
I
D
= 250 mA
100
1
0.0001
I
AV
(A) @ T
A
= 25_C
SUP/SUB85N03-04P
Vishay Siliconix
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
5
THERMAL RATINGS
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
1000
10
0.1 1 10 100
0.1
100
T
C
= 25_C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
Ambient Temperature (_C)
Drain Current (A)I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
5
10
3
10
2
10
1
1
Normalized Effective Transient
Thermal Impedance
100
0.2
0.1
Duty Cycle = 0.5
Drain Current (A)I
D
1 ms
10 ms
100 ms
dc
10 ms
100 ms
Single Pulse
0.05
0.02
1
1010
4
Limited by r
DS(on)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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SUP85N03-04P-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3
Lifecycle:
New from this manufacturer.
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