NXP Semiconductors
ACTT12X-800CTN
Enhanced, high temperature ACTT power switch
ACTT12X-800CTN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 30 July 2015 4 / 14
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 85 °C; Fig. 1; Fig. 2;
Fig. 3
- 12 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 120 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 132 A
I
2
t I
2
t for fusing
t
p
= 10 ms; sine-wave pulse - 72 A²s
dI
T
/dt rate of rise of on-state current I
G
= 70 mA - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
- 2 kV
T
h
(°C)
-50 1501000 50
aaa-019093
8
10
6
4
2
12
14
I
T(RMS)
(A)
0
85 °C
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
surge duration (s)
10
-2
10110
-1
aaa-019094
18
22
14
26
30
I
T(RMS)
(A)
10
f = 50 Hz; T
h
= 85 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
