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ACTT12X-800CTNQ

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
ACTT12X-800CTN
Enhanced, high temperature ACTT power switch
ACTT12X-800CTN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 30 July 2015 6 / 14
10
-5
10
-1
10
-2
10
-4
10
-3
10
3
10
2
10
4
10
(A)
t
p
(s)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
I
TSM
aaa-019090
(1)
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
L
R
220
R
G
DUT
Load Model
2
R
Gen
AC Mains
Filtering Unit
IEC 61000-4-5 Standards
Surge Generator
13
2 H
003aal147
Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
NXP Semiconductors
ACTT12X-800CTN
Enhanced, high temperature ACTT power switch
ACTT12X-800CTN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 30 July 2015 7 / 14
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance
from junction to
heatsink
full or half cycle; with heatsink
compound; Fig. 7
- - 4.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
aaa-014118
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
P
t
Fig. 7. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
ACTT12X-800CTN
Enhanced, high temperature ACTT power switch
ACTT12X-800CTN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 30 July 2015 8 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 8
5 - 35 mA
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 8
5 - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 8
5 - 35 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 9
- - 40 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 9
- - 60 mA
I
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 9
- - 40 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 10 - - 30 mA
V
T
on-state voltage I
T
= 17 A; T
j
= 25 °C; Fig. 11 - - 1.5 V
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C;
Fig. 12
- 0.8 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 100 mA; T
j
= 150 °C;
Fig. 12
0.2 0.45 - V
V
D
= 800 V; T
j
= 25 °C - - 10 µAI
D
off-state current
V
D
= 800 V; T
j
= 150 °C - - 2 mA
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C 850 - - V
Dynamic characteristics
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
4000 - - V/µsdV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; exponential
waveform; gate open circuit
2000 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 20 V/µs; gate open circuit;
snubberless condition
12 - - A/ms
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 10 V/µs; gate open circuit
15 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 1 V/µs; gate open circuit
20 - - A/ms
P1-P3P4-P6P7-P9P10-P12P13-P15

ACTT12X-800CTNQ

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Manufacturer:
WeEn Semiconductors
Description:
Triacs AC Thyristor Triac Power Switch
Lifecycle:
New from this manufacturer.
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