2004 Nov 04 3
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4350X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) note 4 − 3A
I
CM
peak collector current limited by T
j(max)
− 5A
I
B
base current (DC) − 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
note 1 − 550 mW
note 2 − 1W
note 3 − 1.4 W
note 4 − 1.6 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
