OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

M40-3010446

P1-P3P4-P6P7-P9P10-P12P13-P13
2004 Nov 04 6
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
006aaa244
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(5)
(6)
(7)
(8)
(10)
(2)
(3)
(4)
(9)
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
006aaa245
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(5)
(6)
(7)
(8)
(10)
(9)
(4)
(3)
(2)
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.
2004 Nov 04 7
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
=0A −−100 nA
V
CB
= 50 V; I
E
= 0 A; T
j
= 150 °C −−50 µA
I
CES
collector-emitter cut-off current V
CE
= 50 V; V
BE
=0V −−100 nA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
=0A −−100 nA
h
FE
DC current gain V
CE
=2V
I
C
= 0.1 A 300 −−
I
C
= 0.5 A 300 −−
I
C
= 1 A; note 1 300 − 700
I
C
= 2 A; note 1 200 −−
I
C
= 3 A; note 1 100 −−
V
CEsat
collector-emitter saturation
voltage
I
C
= 0.5 A; I
B
=50mA −−80 mV
I
C
= 1 A; I
B
=50mA −−160 mV
I
C
= 2 A; I
B
= 100 mA −−280 mV
I
C
= 2 A; I
B
= 200 mA; note 1 −−260 mV
I
C
= 3 A; I
B
= 300 mA; note 1 −−370 mV
R
CEsat
equivalent on-resistance I
C
= 2 A; I
B
= 200 mA; note 1 − 100 130 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 2 A; I
B
= 100 mA −−1.1 V
I
C
= 3 A; I
B
= 300 mA; note 1 −−1.2 V
V
BEon
base-emitter turn-on voltage V
CE
=2V; I
C
=1A 1.1 −−V
f
T
transition frequency I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz 100 −−MHz
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
= 0 A; f = 1 MHz −−25 pF
2004 Nov 04 8
Philips Semiconductors Product specification
50 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4350X
handbook, halfpage
0
800
200
400
600
MLE181
10
−1
1
I
C
(mA)
h
FE
10 10
2
10
3
10
4
(1)
(2)
(3)
Fig.6 DC current gain as a function of collector
current; typical values.
V
CE
=2V.
(1) T
amb
= 100 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLE180
0
1.2
0.4
0.8
10
−1
110
I
C
(mA)
V
BE
(V)
10
2
10
3
10
4
(1)
(3)
(2)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
V
CE
=2V.
(1) T
amb
= −55 °C.
(2) T
amb
=25°C.
(3) T
amb
= 100 °C.
handbook, halfpage
MLE183
1
10
−1
10
−2
10
−3
10
−1
110
I
C
(mA)
V
CEsat
(V)
10
2
10
3
10
4
(3)
(1)
(2)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLE184
1
10
−1
10
−2
10
−3
10
−1
110
I
C
(mA)
V
CEsat
(V)
10
2
10
3
10
4
(3)
(1)
(2)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
T
amb
=25°C.
(1) I
C
/I
B
= 100.
(2) I
C
/I
B
= 50.
(3) I
C
/I
B
= 10.
P1-P3P4-P6P7-P9P10-P12P13-P13

M40-3010446

Mfr. #:
Buy M40-3010446
Manufacturer:
Harwin
Description:
Headers & Wire Housings 4P SIL SMT VERTICAL SHROUDED TAB HEADER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet