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AUIRF7343QTR

P1-P3P4-P6P7-P9P10-P11
AUIRF7343Q
V
DSS
55V
R
DS(on)
typ.
0.043
I
D
4.7A
-55V
0.095
-3.4A
N-CH P-CH
max.
0.050 0.105
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 55
-55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7
-3.4
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8
-2.7
I
DM
Pulsed Drain Current 38
-27
P
D
@T
A
= 25°C Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C Maximum Power Dissipation
1.3
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
72
114
mJ
I
AR
Avalanche Current
4.7
-3.4
A
E
AR
Repetitive Avalanche Energy
0.20
mJ
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150 °C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF7343Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7343Q SO-8 Tape and Reel 4000 AUIRF7343QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
AUIRF7343Q
2 2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch 55 ––– –––
V
V
GS
= 0V, I
D
= 250µA
P-Ch -55 ––– ––– V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
N-Ch ––– 0.059 –––
V/°C
Reference to 25°C, I
D
= 1mA
P-Ch ––– 0.054 ––– Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
N-Ch
––– 0.043 0.050

V
GS
= 10V, I
D
= 4.7A
––– 0.056 0.065 V
GS
= 4.5V, I
D
= 3.8A
P-Ch
––– 0.095 0.105 V
GS
= -10V, I
D
= -3.4A
––– 0.150 0.170 V
GS
= -4.5V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage
N-Ch 1.0 ––– –––
V
V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0 ––– ––– V
DS
= V
GS
, I
D
= -250µA
gfs Forward Trans conductance
N-Ch 7.9 ––– –––
S
V
DS
= 10V, I
D
= 4.5A
P-Ch 3.3 ––– ––– V
DS
= -10V, I
D
= -3.1A
I
DSS
Drain-to-Source Leakage Current
N-Ch ––– ––– 2.0
µA
V
DS
= 55V, V
GS
= 0V
P-Ch ––– ––– -2.0 V
DS
= -55V,V
GS
= 0V
N-Ch ––– ––– 25 V
DS
= 55V, V
GS
= 0V ,T
J
= 55°C
P-Ch ––– ––– -25 V
DS
= -55V,V
GS
= 0V,T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage N-P ––– –––
± 100
nA
V
GS
= ± 20V
Gate-to-Source Reverse Leakage N-P ––– –––
± 100 V
GS
= ± 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
N-Ch ––– 24 36
nC
N-Channel
P-Ch ––– 26 38
I
D
= 4.5A, V
DS
= 44V,V
GS
= 10V
Q
gs
Gate-to-Source Charge
N-Ch ––– 2.3 3.4

P-Ch ––– 3.0 4.5
P-Channel
Q
gd
Gate-to-Drain Charge
N-Ch ––– 7.0 10
I
D
= - 3.1A,V
DS
= -44V,V
GS
= -10V
P-Ch ––– 8.4 13
t
d(on)
Turn-On Delay Time
N-Ch ––– 8.3 12
ns
N-Channel
P-Ch ––– 14 22
V
DD
= 28V,I
D
= 1.0A,R
G
= 6.0
t
r
Rise Time
N-Ch ––– 3.2 4.8
R
D
= 28
P-Ch ––– 10 15

t
d(off)
Turn-Off Delay Time
N-Ch ––– 32 48 P-Channel
P-Ch ––– 43 64
V
DD
= -28V,I
D
= -1.0A,R
G
= 6.0
t
f
Fall Time
N-Ch ––– 13 20
R
D
= 28
P-Ch ––– 22 32
C
iss
Input Capacitance
N-Ch ––– 740 –––
pF
N-Channel
P-Ch ––– 690 ––– V
GS
= 0V,V
DS
= 25V,ƒ = 1.0MHz
C
oss
Output Capacitance
N-Ch ––– 190 ––– 
P-Ch ––– 210 ––– P-Channel
C
rss
Reverse Transfer Capacitance
N-Ch ––– 71 ––– V
GS
= 0V,V
DS
= -25V,ƒ = 1.0MHz
P-Ch 86 –––
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current (Body Diode)
N-Ch ––– ––– 2.0
A
P-Ch ––– ––– -2.0
I
SM
Pulsed Source Current
N-Ch ––– ––– 38
(Body Diode)
P-Ch ––– ––– -27
V
SD
Diode Forward Voltage
N-Ch ––– 0.70 1.2 T
J
= 25°C,I
S
= 2.0A,V
GS
= 0V 
P-Ch ––– -0.80 -1.2 T
J
= 25°C,I
S
= -2.0A,V
GS
= 0V 
t
rr
Reverse Recovery Time
N-Ch ––– 60 90
ns
N-Channel
P-Ch ––– 54 80 T
J
= 25°C ,I
F
= 2.0A, di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
N-Ch ––– 120 170
nC
P-Channel
P-Ch 85 130
T
J
= 25°C,I
F
= -2.0A, di/dt = 100A/µs
V
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)
N-Channel I
SD
4.7A, di/dt 220A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
P-Channel I
SD
-3.4A, di/dt -150A/µs, V
DD
V
(BR)DSS
, T
J
150°C
N-Channel Starting T
J
= 25°C, L = 6.5mH, R
G
= 25, I
AS
= 4.7A.
P-Channel Starting T
J
= 25°C, L = 20mH, R
G
= 25, I
AS
= -3.4A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
AUIRF7343Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
N-Channel
1
10
100
3 4 5 6
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
P1-P3P4-P6P7-P9P10-P11

AUIRF7343QTR

Mfr. #:
Buy AUIRF7343QTR
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms
Lifecycle:
New from this manufacturer.
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